Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
Citations
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Journal ArticleDOI
Internal oxidation and metal dusting of Fe–Si alloys
TL;DR: In this paper, an increase in graphite nucleation sites at Fe 3 C/SiO 2 phase boundaries, and the volume expansion accompanying graphite precipitation is attributed to increased graphite formation.
Journal ArticleDOI
Kinetics of laser-induced oxidation of silicon near room temperature
TL;DR: In this paper, a diffusion model is developed for low-temperature oxidation which takes into account the recombination process of the diffusive species, and the activation energy of diffusion of the active species was found to be 0.15 eV.
Book ChapterDOI
Effects of Water Vapour on Oxidation
TL;DR: In a subsequent workshop on high-temperature corrosion as mentioned in this paper, it was concluded that understanding remained incomplete and considerable experimental effort has led to a better definition of the problem and an improved level of understanding.
Journal ArticleDOI
Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation
John P. Hirth,William A. Tiller +1 more
TL;DR: In this paper, a detailed ledge model is presented to describe the oxidation of singlecrystal silicon, which leads to an explanation of the observed anisotropic stacking fault distributions among available available {111} planes when orientations slightly removed from low index surfaces are oxidized.
Journal ArticleDOI
Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects
TL;DR: In this article, a novel theory for the thermal silicon oxide growth rate is constructed based on a new picture of the oxidation process and its efficiency is theoretically discussed on the basis of both analytical and numerical approaches.
References
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Book
Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI
Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.