Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Enhanced oxidation of molybdenum disilicide under tensile stress: relation to pest mechanisms.
TL;DR: In this article, the authors attributed the mechanical disintegration of molybdenum disilicide in air or oxygen at temperatures of 300° to 600°C to stress enhanced oxidation at the tips of Griffith flaws, eventually leading to brittle fracture.
Journal ArticleDOI
Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis
TL;DR: In this article, a physical two-dimensional (2D) modeling of the thermal oxidation of silicon has been developed based on the explicit treatment of the reaction expansion, incorporating the viscoelastic behaviour of oxide and nitride and giving a complete calibration of the stress-dependent parameters.
Patent
Method of etching a silicon-based material
Green Mino,Feng-Ming Liu +1 more
TL;DR: In this article, a method for selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface is described, where the silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol.
Journal ArticleDOI
A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics
TL;DR: In this paper, a comparison of phase growth and kinetics in both systems was made using several techniques, and it was shown that nickel silicides have a sequential growth of Ni"2Si, NiSi and NiSi"2 as usually reported, whereas two nickel germanides, Ni"5Ge"3 and NiGe, grow simultaneously until the total consumption of Ni film.
Journal ArticleDOI
The role of interface dislocations and ledges as sources/sinks for point defects in scaling reactions
TL;DR: In this article, the specific roles of interface misfit and misorientation dislocations, and of disconnections, in creating or annihilating the point defects supporting diffusion during scale growth are considered.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI
Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.