Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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TLDR
In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Journal ArticleDOI
Silicene oxides: formation, structures and electronic properties
TL;DR: This work indicates that the oxidation of silicene should be exquisitely controlled to obtain specific SOs with desired electronic properties.
Journal ArticleDOI
Engineering of Al/CuO Reactive Multilayer Thin Films for Tunable Initiation and Actuation
TL;DR: In this paper, the authors describe the technology of deposition of Al/CuO multilayers focusing on direct current sputter deposition followed by a comprehensive review of the materials structural characteristics.
Journal ArticleDOI
Oxygen transport through glass layers formed by a gel process
TL;DR: Oxygen diffusion results for binary B 2 O 3 /SiO 2, GeO 2 /Si2 O 2, AlO 2 O 2 /AlO 2 and TiO 2 2 /TiO 2 glasses were determined from oxidation data on silicon single crystal material gel-coated with the appropriate glasses, obtained from gel-solutions by a dipping process and subsequent heat treatment.
Journal ArticleDOI
A study of the initial stages of the oxidation of silicon using the Fresnel method
Frances M. Ross,W. M. Stobbs +1 more
TL;DR: In this article, the initial stages of the oxidation of silicon are studied using a new analytical technique which was developed for use in the transmission electron microscope, based on the use of a through-focal series of images of an interface viewed edge-on to characterise any compositional discontinuity across it.
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Theoretical model for self‐interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon
TL;DR: Using a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation as discussed by the authors.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.