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Journal ArticleDOI

General Relationship for the Thermal Oxidation of Silicon

Bruce E. Deal, +1 more
- 01 Dec 1965 - 
- Vol. 36, Iss: 12, pp 3770-3778
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TLDR
In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Abstract
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.

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Journal ArticleDOI

Properties of deposited size‐selected clusters: Reactivity of deposited silicon clusters

TL;DR: The room temperature oxidation of deposited size-selected silicon clusters (Sin, n=10, 13, and 40-50) has been examined using x-ray photoelectron spectroscopy (XPS) as mentioned in this paper.
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Method of making silicon anode material for rechargeable cells

TL;DR: In this article, a method of forming silicon anode material for rechargeable cells is described. But the method requires a metal matrix, comprising no more than 30% silicon, including silicon structures dispersed therein.
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Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination

TL;DR: In this article, the effect of HF pressure on the Al2O3 etch rates and fluorination was explored, and different HF pressures ranging from 0.07 to 9.0 Torr were employed for Al 2O3 fluorination.
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The oxidation behavior of the quinary FeCoNiCrSix high-entropy alloys

TL;DR: In this article, the oxidation of three quinary FeCoNiCr6 high-entropy alloys (x = 0.25, 0.5 and 1.0) were investigated at 700-900°C in dry air and at 900-magnitude in various O2-containing atmospheres.
Patent

Additive for lithium ion rechageable battery cells

TL;DR: In this paper, the authors claim that the addition of vinylene carbonate (VC) and optionally also fluoroethylene carbonates to the electrolyte of lithium ion cells having a structural silicon composite anode significantly improves the cycling performance of the cells.
References
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Book

Boundary layer theory

TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI

Permeation of Gaseous Oxygen through Vitreous Silica

TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.
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