Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor
TL;DR: In this article, the authors compared the oxidation behavior of C/SiC materials in H 2 O/O 2 /argon gas mixtures and in HO 2 O 2 /O 2/argon mixtures, respectively, by measuring the thickness of the SiO 2 scale formed on the SiC coating.
Journal ArticleDOI
A diffusional model for the oxidation behavior of Si1−xGex alloys
TL;DR: In this article, the authors developed a kinetic model to describe the oxidation behavior of Si1−xGex alloys during Ge segregation, which compares the Deal-Grove flux of oxidant diffusing through the oxide to the maximum flux of Si diffusing in the Ge-rich layer.
Journal ArticleDOI
Very thin oxide film on a silicon surface by ultraclean oxidation
TL;DR: The growth rate of ultraclean oxide at 900°C is governed by a simple parabolic law even in the range of 5−20 nm as discussed by the authors, and the barrier height at the silicon-oxide interface for electrons emission from silicon to oxide is little decreased as the thickness is thinner.
Journal ArticleDOI
Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4
TL;DR: The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350 C showed that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3 N4.
Journal ArticleDOI
Noncrystalline silicon dioxide films on silicon: A review☆
TL;DR: In this article, the importance of non-crystalline SiO2 films in the manufacture of semiconductor devices and integrated circuits is pointed out; a properly prepared interface is very perfect.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.