Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
Reads0
Chats0
TLDR
In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
Citations
More filters
Journal ArticleDOI
Layering of ionic liquids on rough surfaces
Alexis Sheehan,L. Andres Jurado,Shivaprakash N. Ramakrishna,Andrea Arcifa,Antonella Rossi,Antonella Rossi,Nicholas D. Spencer,Rosa M. Espinosa-Marzal +7 more
TL;DR: This work has performed an extensive investigation of the structural forces between two surfaces with well-defined roughness in 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide by atomic force microscopy and shows that the equilibrium structure of the interfacial IL strongly depends on the topography of the contact.
Stress-assist chemical reactions front propagation in deformable solids
TL;DR: In this article, the authors considered a stress-assist chemical reaction front propagation in a deformable solid undergoing a localized chemical reaction between solid and gas constituents, where the reaction is sustained by the diffusion of the gas constituent through the transformed material.
Journal ArticleDOI
Characteristics of the Si‐SiO2 interface states in thin (70–230 Å) oxide structures
S. Kar,R. L. Narasimhan +1 more
TL;DR: In this paper, the electron and hole capture cross section versus energy profiles of SiSiO2 interfaces were investigated in unannealed metal-silicon dioxide/silicon (MOS) structures with the gate oxide thickness in the range of 70-230 A using the optical MOS admittance technique.
Journal ArticleDOI
Interpretation of the Parabolic and Nonparabolic Oxidation Behavior of Silicon Oxynitride
TL;DR: In this paper, a time dependence function was developed and incorporated into the parabolic rate law, yielding a new rate law which reads ΔW/A0=a arctan √bt+c√t.
Journal ArticleDOI
Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
TL;DR: In this paper, the growth rate of SiC(0001) C-face at oxidation thicknesses less than around 20 nm is shown to be much higher than those given by the Deal-Grove (D-G) model.
References
More filters
Book
Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI
Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.