Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Silicon microelectronics technology
TL;DR: A historical review of that revolution — from the first integrated circuit to modern very large scale integration (VLSI) technology — is reviewed and the development of present-day microelectronics manufacturing technology is reviewed, based on the concept of the “planar process.”
Journal ArticleDOI
Nature of interfaces and oxidation processes in Ge+‐implanted Si
TL;DR: In this article, the nature of the interfaces between silicon dioxide and germanium-rich layer (SiO2/GexSi1−x) in Ge+−ion implanted and oxidized Si (100) samples were studied.
Journal ArticleDOI
Growth rates of dry thermal oxidation of 4H-silicon carbide
TL;DR: In this paper, a full set of growth rate coefficients to enable high-accuracy two-and three-dimensional simulations of dry thermal oxidation of 4H-silicon carbide was provided.
Journal ArticleDOI
The use of simulation in semiconductor technology development
Daniel C. Cole,E.M. Buturla,Stephen S. Furkay,K. Varahramyan,James A. Slinkman,J. A. Mandelman,D.P. Foty,Orest Bula,A.W. Strong,J.W. Park,T.D. Linton,J.B. Johnson,Massimo V. Fischetti,Steven E. Laux,P.E. Cottrell,H.G. Lustig,F. Pileggi,D. Katcoff +17 more
TL;DR: In this paper, an overview of the types of problems encountered in semiconductor technology development that are actively studied today via simulation methods is presented, including process simulations, such as the diffusion of dopant atoms, oxidation, etching, deposition, and epitaxial growth, and device simulations, which predict the flow of charge carriers and field distribution within a semiconductor device, given its material structure and operating conditions.
Journal ArticleDOI
A simulation system for diffusive oxidation of silicon: a two-dimensional finite element approach
Ernst Rank,Ulrich Weinert +1 more
TL;DR: A numerical approach to the simulation of two-dimensional local oxidation of silicon is presented, taking advantage of the description of the oxidation as a three-component thermodynamic process involving silicon, silicon dioxide, and oxidant molecules to create a reactive layer of finite width.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.