Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Journal ArticleDOI
Morphology and adhesion of biomolecules on silicon based surfaces.
TL;DR: Step by step morphological changes of silicon as well as adhesion during its surface modification have been studied using atomic force microscopy to improve adhesion between biomolecules and the silicon based surfaces.
Journal ArticleDOI
Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions
Tomonori Takahashi,Shigeto Fukatsu,Kohei M. Itoh,Masashi Uematsu,Akira Fujiwara,Hiroyuki Kageshima,Yasuo Takahashi,Kenji Shiraishi +7 more
TL;DR: In this article, self-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300°C under equilibrium conditions using isotope heterostructures.
Journal ArticleDOI
Thin SiO2 insulators grown by rapid thermal oxidation of silicon
TL;DR: In this article, the initial regime of thermal oxidation of silicon by the rapid thermal oxidation technique has been investigated and the results clearly indicate the nonlinear behavior of the growth kinetics in the short time regime.
Journal ArticleDOI
Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation
K. Yamabe,K. Imai +1 more
TL;DR: In this paper, the curvature radius at the convex corner of a trenched Si surface and electric field intensification was modeled as a rounding-off oxidation, and a simple one-dimensional model that considered both stress generation during Si oxidation and stress relaxation by oxide viscous flow was proposed.
Journal ArticleDOI
Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS
S. Schamm,Caroline Bonafos,H. Coffin,Nikolay Cherkashin,Marzia Carrada,G. Ben Assayag,Alain Claverie,Marcel Tencé,Christian Colliex +8 more
TL;DR: A review of dedicated transmission electron microscopy methods, which can be used to measure the different parameters of the nanoparticles population, is presented with an emphasis on those relying on electron energy-loss spectroscopy (EELS).
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI
Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.