Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
Yingnan Liu,Cheng Tan,Harry Chou,Avinash P. Nayak,Di Wu,Rudresh Ghosh,Hsiao-Yu Chang,Yufeng Hao,Xiaohan Wang,Joon-Seok Kim,Richard D. Piner,Rodney S. Ruoff,Rodney S. Ruoff,Deji Akinwande,Keji Lai +14 more
TL;DR: The composition, structure, and electrical properties of mechanically exfoliated WSe2 nanosheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation.
Journal ArticleDOI
Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation
TL;DR: In this article, a comparative study of SiC etching with thermal oxidation in regard to the crystal orientation, polytype and carrier concentration dependence was conducted. But, the etching process is significantly affected by the etch ambience: the rate is greatly reduced by a nitrogen gas purge, which indicates an essential role of dissolved oxygen in the melt.
Journal ArticleDOI
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
Mark E. Law,Stephen M. Cea +1 more
TL;DR: The commonly used models for implantation, diffusion, and material growth are described and the supporting numerical techniques are described.
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Desktop Growth of Carbon‐Nanotube Monoliths with In Situ Optical Imaging
TL;DR: This work utilized a custom-built desktop reactor apparatus for synthesis of “monolithic” forests of aligned CNTs, where the reaction takes place in open view locally on a suspended silicon platform that is heated resistively (Figure 1).
Journal ArticleDOI
Nanovoid formation and annihilation in gallium nanodroplets under lithiation-delithiation cycling.
Wentao Liang,Liang Hong,Hui Yang,Feifei Fan,Yang Liu,Hong Li,Ju Li,Jian Yu Huang,Long Qing Chen,Ting Zhu,Sulin Zhang +10 more
TL;DR: The self-healing behavior of gallium nanodroplets under electrochemical cycling at room temperature, observed with in situ transmission electron microscopy (TEM) provides mechanistic insights into the void formation and annihilation mechanism.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.