Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
TL;DR: In this article, the authors investigated the oxygen partial pressure dependence of the Silicon carbide (SiC) oxidation process using in-situ spectroscopic ellipsometry at oxygen partial pressures between 1 and 0.02
Journal ArticleDOI
Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition
TL;DR: In this article, the authors showed that the substrate anneal caused the formation of TiO2 in the Pt layer, accompanied by a high density of faceted protrusions on the Pt surface.
Journal ArticleDOI
Accelerated life tests of SnO 2 —Si heterojunction solar cells
T.R. Nash,R.L. Anderson +1 more
TL;DR: In this article, the series resistance of SnO 2 -Si heterojunction solar cells increases with time on-shelf after fabrication, but tends to stabilize after a few weeks.
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Novel:: a nonlinear viscoelastic model for thermal oxidation of silicon
TL;DR: In this article, a computer oxidation modeling program, named NOVEL, was developed, which has been integrated into FINDPRO to predict both the oxide shape and stress, and it combines the modified Deal-Grove growth rate model with a nonlinear viscoclastic deformation model.
Journal ArticleDOI
High-Temperature Oxidation of SiC-Based Composite: Rate Constant Calculation from ReaxFF MD Simulations, Part II
TL;DR: In this article, molecular dynamics simulated trajectories were used to extract the initial stages of transport and kinetics of SiC oxidation by O2 and H2O and the combustion and pyrolysis of EPDM.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.