Journal ArticleDOI
Grain boundary diffusion of phosphorus in polycrystalline silicon
M R Murti,K V Reddy +1 more
TLDR
In this paper, an Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and preexponential factor D'0=4.8*10-3 cm2 s-1.Abstract:
Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 degrees C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in the grain boundary were obtained following Leclaire's method of analysis. An Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and pre-exponential factor D'0=4.8*10-3 cm2 s-1.read more
Citations
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Journal ArticleDOI
Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
Bin Han,Hisashi Takamizawa,Yasuo Shimizu,Koji Inoue,Yasuyoshi Nagai,Fumiko Yano,Yorinobu Kunimune,Masao Inoue,Akio Nishida +8 more
TL;DR: In this paper, the dopant diffusion path in n-and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field effect transistors (MOSFETs) was investigated using atom probe tomography, based on the annealing time dependence of dopant distribution at 900°C.
Journal ArticleDOI
Understanding the Degradation of a Model Si Anode in a Li-Ion Battery at the Atomic Scale
Se-Ho Kim,Kang Dong,Huan Zhao,Ayman A. El-Zoka,Xuyang Zhou,Eric Woods,Finn Giuliani,Ingo Manke,Dierk Raabe,Baptiste Gault +9 more
TL;DR: In this paper , the degradation of the liquid electrolyte and Si electrode and their interface were investigated using the latest developments in cryo-atom probe tomography, and it was shown that Si anode corrosion from the decomposition of the Li salt before charge-discharge cycles even begin.
Journal ArticleDOI
Scanning tunneling microscopy investigation of phosphorus-doped polycrystalline silicon films
TL;DR: In this article, the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD) was investigated using scanning tunneling microscopy (STM) in air.
Journal ArticleDOI
Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing
Jeong-Wan Choi,Weon-Bum Jin,Seung-Muk Bae,Yil-Hwan You,Hyoung-June Kim,Byeong-Kook Kim,Yongwoo Kwon,Seungho Park,Jin-Ha Hwang +8 more
TL;DR: In this article, the authors applied intense visible light irradiation to polycrystalline Si-thin polysilicon on glass substrates, which exhibited strong absorption features due to their amorphization by the application of a large implantation dose.
Journal ArticleDOI
Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography
Hisashi Takamizawa,Yasuo Shimizu,Koji Inoue,Y. Nozawa,Takeshi Toyama,Fumiko Yano,Masao Inoue,Akio Nishida,Yasuyoshi Nagai +8 more
TL;DR: In this article, the effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography, and the results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P and B.
References
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Journal ArticleDOI
Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon
C. H. Seager,T. G. Castner +1 more
TL;DR: In this article, the electrical transport properties of polycrystalline silicon have been characterized as a function of temperature on both bulk specimens and individual grain boundaries in this material and potential probe measurements show that a large spread in grain-boundary impedances exist in these higher-doped specimens.
Proceedings Article
Zero-bias resistance of grain boundaries in neutron transmutation doped polycrystalline silicon
C. H. Seager,T. G. Castner +1 more
TL;DR: In this article, the electrical transport properties of polycrystalline silicon have been characterized as a function of temperature on both bulk specimens and individual grain boundaries in this material and potential probe measurements show that a large spread in grain-boundary impedances exist in these higher-doped specimens.
Journal ArticleDOI
Grain Boundary and Lattice Diffusion in Polycrystalline Bodies
H. S. Levine,C. J. MacCallum +1 more
TL;DR: In this paper, the average concentration distribution of diffusant in a polycrystalline body is analyzed under the assumption that two interrelated mechanisms consisting of diffusion through the grains and in the boundaries around the grains are dominant in different penetration regions.
Journal ArticleDOI
Diffusion of Impurities in Polycrystalline Silicon
TL;DR: In this paper, the diffusion of electrically active impurities into polycrystalline silicon deposited by the thermal decomposition of silane has been studied and the maximum diffusivity is associated with a structure which has the maximum {110} texture.