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High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

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TLDR
It is shown that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers, and high mobilities were achieved.
Abstract
Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10 5 were achieved.

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Geometric control of inkjet printed features using a gelating polymer

TL;DR: In this paper, a TiO2 ink was formulated that gels above a certain temperature, at about 37 °C, due to the limited solubility of the poly(vinyl methyl ether) buoyant block in the continuous medium of the ink.
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Organic semiconductors based on small molecules with thermally or photochemically removable groups

TL;DR: An overview of recent progress in OFETs based on solution processable small molecules that can be converted to insoluble organic semiconducting materials on films by thermal or photochemical removal of leaving groups after fabrication of the film is provided.
Journal ArticleDOI

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

TL;DR: In this article, field effect transistors (GFETs) are fabricated on flexible substrates from graphene grown by chemical vapor deposition (CVD) and demonstrated unity current gain, fT, and unity power gain up to 10.7 GHz with strain limits of 1.75%.
Journal ArticleDOI

High-mobility low-temperature ZnO transistors with low-voltage operation

TL;DR: In this paper, a low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric.
Journal ArticleDOI

Organic field-effect transistors and memory elements using deoxyribonucleic acid (DNA) gate dielectric

TL;DR: In this article, the deoxyribonucleic acid (DNA) bio-polymers derived from fish waste products are employed as gate dielectric in n-type methanofullerene and p-type pentacene based organic field effect transistors working at low voltage levels and low gate leakage currents.
References
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Journal ArticleDOI

Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

TL;DR: In this article, the authors used thin-film, field effect transistor structures to probe the transport properties of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT.
Journal ArticleDOI

Integrated Optoelectronic Devices Based on Conjugated Polymers

TL;DR: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode (LED) of similar size, which represents a step toward all- polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Journal ArticleDOI

Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

TL;DR: A simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers is shown.
Journal ArticleDOI

All-polymer field-effect transistor realized by printing techniques

TL;DR: A field-effect transistor has been fabricated from polymer materials by printing techniques, which shows high current output, and opens the way for large-area, low-cost plastic electronics.
Journal ArticleDOI

A soluble and air-stable organic semiconductor with high electron mobility

TL;DR: A crystallographically engineered naphthalenetetracarboxylic diimide derivative is reported that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions and to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase.
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