Journal ArticleDOI
High-temperature ultraviolet detection based on InGaN Schottky photodiodes
TLDR
In this article, a thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at high temperatures up to 523 K.Abstract:
A thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at high temperatures up to 523 K. The reverse leakage current remains at a low level (10−7−10−8 A), while the UV responsivity is as high as 5.6 A/W at −3 V under 523 K, without observing the persistent photoconductivity. The discrimination ratio between ultraviolet (378 nm) and visible light (600 nm) is maintained to be more than 105. The temperature-dependent current-voltage characteristics of the MIS diode were analyzed. The photocurrent gain at reverse biases was interpreted in term of thermionic-field emission (TFE) and field-emission tunneling mechanism from room-temperature to 463 K, while TFE becomes the dominant mechanism at high temperatures.read more
Citations
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Journal ArticleDOI
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Journal ArticleDOI
High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga₂O₃ nanobelts.
TL;DR: Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is a challenge due to the degradation in the dark current and photoresponse properties, but β-Ga2O3 multi-layered nanobelts with (l00) facet-oriented were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies.
Journal ArticleDOI
New UV-A Photodetector Based on Individual Potassium Niobate Nanowires with High Performance
Hui Liu,Zhiming Zhang,Linfeng Hu,Nan Gao,Liwen Sang,Meiyong Liao,Renzhi Ma,Fangfang Xu,Xiaosheng Fang +8 more
TL;DR: In this article, a new UV-A photodetector based on K2Nb8O21 nanowire is successfully fabricated for the first time, and the potassium niobate is synthesized using a facile molten method.
Journal ArticleDOI
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
Shashwat Rathkanthiwar,Anisha Kalra,Swanand V. Solanke,Neha Mohta,Rangarajan Muralidharan,Srinivasan Raghavan,Digbijoy N. Nath +6 more
TL;DR: In this paper, the authors reported the highest responsivity for III-nitride metal Semiconductor metal solar-blind photodetectors on sapphire, with a visible rejection exceeding three orders of magnitude for front illumination.
Journal ArticleDOI
High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
Bhera Ram Tak,Manjari Garg,Sheetal Dewan,Carlos G. Torres-Castanedo,Kuang-Hui Li,Vinay Gupta,Xiaohang Li,Rajendra Singh +7 more
TL;DR: In this paper, high-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated.
References
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Journal ArticleDOI
Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact
TL;DR: In this article, a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer was developed.
Journal ArticleDOI
Light intensity dependence of photocurrent gain in single-crystal diamond detectors
TL;DR: In this article, the photocurrent gain in a diamond photodetector that has two non-ohmic contacts connected back-to-back has been investigated, and the authors observed that the gain originates from a metal/diamond interface trap center.
Journal ArticleDOI
High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
TL;DR: In this article, a super wide bandgap calcium fluoride (CaF2) was used as the insulator for InGaN-based photodetectors in dark condition.
Journal ArticleDOI
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Yaqi Wang,Siddharth Alur,Yogesh K. Sharma,Fei Tong,Resham Thapa,Patrick Gartland,Tamara Issacs-Smith,Claude Ahyi,John R. Williams,Minseo Park,Mark Johnson,Tanya Paskova,Edward A. Preble,Keith R. Evans +13 more
TL;DR: In this article, an array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively.
Journal ArticleDOI
Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer
Liwen Sang,Zelian Qin,H. Fang,Tao Dai,Z. J. Yang,B. G. Shen,G. Y. Zhang,Xuan Zhang,Jiwen Xu,Dapeng Yu +9 more
TL;DR: In this paper, a method of reducing threading dislocation density in AlN epilayers grown on sapphire substrate is reported by introducing an AlN buffer layer grown by a pulsed atomic-layer epitaxy method.