回路設計用先端MOSFETモデルの進化 －Meyer モデルから表面ポテンシャルモデルへの推移－
TLDR
MOSFET as discussed by the authors ) is a type of MOS-FET that can be used to fuse two different types of materials, such as polysilicon and polyethylene.Abstract:
これまで産業界をけん引してきたMOSFET の微細化を推進することが難しくなってきている．これは，微細化によって達成された高性能化を有効に利用する用途が限られてきたことのほかに，微細化によって応用を難しくするMOSFET の特性が顕著になってきたことが挙げられる．一方，エコ社会の実現には，低消費電力回路設計への要求が高い．これを実現するには，MOSFET の微細化は避けて通れない．1970 年代に回路シミュレータが開発されて，たくさんのトランジスタを複雑に組み合わせて様々な性能を持った回路が設計できるようになった．このとき以来長く用いられてきたのが，Meyer モデルで，様々の近似を用いてトランジスタ特性を簡潔な式で記述している．しかし複雑な特性を呈する微細MOSFET にはモデルの精度が不十分になってきた．そこでトランジスタ特性を物理原理に基づいて記述する，表面ポテンシャルモデルが開発され，モデルの主流になりつつある．この変遷をMOSFET特性に基づいて解説する．read more
Citations
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A practical small-signal equivalent circuit model for RE-MOSFETs valid up to the cut-off frequency
TL;DR: In this paper, the non-quasistatic contribution to the Y-parameters is shown to be much smaller than usually expected, especially for advanced pocket-implant MOSFET technologies being developed for RF devices.
References
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Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.
Journal ArticleDOI
Characteristics of the metal-Oxide-semiconductor transistors
TL;DR: In this article, the theory of the MOS transistor in the gradual channel approximation is presented with the assumption of constant surface and bulk charge, and constant surface mobility, from the simple theory, the complete design equations are derived and design curves are calculated.
Journal ArticleDOI
CMOS technology characterization for analog and RF design
TL;DR: A set of characterization vehicles that can be employed to quantify the analog behaviour of active and passive devices in CMOS processes, in particular, properties that are not modeled accurately by SPICE parameters are described.
Journal ArticleDOI
Unified complete MOSFET model for analysis of digital and analog circuits
TL;DR: The unified treatment of the complete MOSFET model allows all transistor characteristics to be calculated without any nonphysical fitting parameters, and the calculation time is drastically reduced in comparison with a conventional piece-wise model.