Journal ArticleDOI
Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance
Min She,Tsu-Jae King +1 more
TLDR
In this article, the write/erase characteristics of Germanium nanocrystal memory device were modeled using single-charge tunneling theory with quantum confinement and Coulomb blockade effects, and a trap model was proposed to describe the retention characteristic of the memory.Abstract:
The write/erase characteristics of Germanium nanocrystal memory device are modeled using single-charge tunneling theory with quantum confinement and Coulomb blockade effects. A trap model is proposed to describe the retention characteristic of the nanocrystal memory. The impact of nanocrystal size, tunnel-oxide thickness, and high-k tunnel material is studied, and the suitability of the nanocrystal memory devices for nonvolatile memory and DRAM applications is discussed. Issues related to the scaling limit of the nanocrystal memory device are investigated.read more
Citations
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Journal ArticleDOI
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance
J.H. Chen,Ying Qian Wang,Won Jong Yoo,Yee-Chia Yeo,Ganesh S. Samudra,D.S.H. Chan,A. Y. Du,Dim-Lee Kwong +7 more
TL;DR: The Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices and can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window.
Patent
Nanocomposites with high thermoelectric figures of merit
TL;DR: In this paper, the authors proposed a nanocomposite thermoelectric materials that exhibit enhanced thermolectric properties, where two or more components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity.
Journal ArticleDOI
Flexible Artificial Sensory Systems Based on Neuromorphic Devices.
TL;DR: In this article, the authors present recent progress in the area of neuromorphic electronics for flexible artificial sensory systems, including device structures, mechanisms, and functions, and the design of intelligent, flexible perception systems based on synaptic devices.
Journal ArticleDOI
Design Optimization of Metal Nanocrystal Memory—Part I: Nanocrystal Array Engineering
TL;DR: In this paper, a 3D electrostatic model and a modified Wentzel-Kramers-Brillouin tunneling model have been implemented to simulate the programming and retention characteristics of the metal nanocrystal (NC) memories.
Patent
Methods for high figure-of-merit in nanostructured thermoelectric materials
Zhifeng Ren,Bed Poudel,Gang Chen,Yucheng Lan,Dezhi Wang,Qing Hao,Mildred S. Dresselhaus,Yi Ma,Xiao Yan,Xiaoyuan Chen,Xiaowei Wang,Joshi R. Giri,Bo Yu +12 more
TL;DR: In this article, the properties of nanostructured thermoelectric materials with high ZT values are discussed, and various compositions and methods relating to aspects of these materials (e.g., modulation doping) are further disclosed.
References
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Journal ArticleDOI
Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials
TL;DR: The large exciton binding energy in Si and Ge quantum dots suggests that the photoluminescence from these nanostructures is of excitonic origin even at room temperature.
Journal ArticleDOI
Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures
TL;DR: Averin et al. as discussed by the authors proposed a single charge tunneling method to transfer electrons one-by-one in low-Capacitance tunnel junctions, and applied it to semiconductor nanostructures.
Journal ArticleDOI
Quantum confinement in germanium nanocrystals
TL;DR: In this article, the electronic structure of Ge nanocrystals using a sp3 tight binding description is studied and analytical laws for the confinement energies, valid over the whole range of sizes, are derived.
Proceedings ArticleDOI
Volatile and non-volatile memories in silicon with nano-crystal storage
TL;DR: In this article, a single transistor memory structure with changes in threshold voltage exceeding /spl ap/0.25 V corresponding to single electron storage in individual nano-crystals, operating in the sub-3 V range, and exhibiting long term to nonvolatile charge storage is reported.
Journal ArticleDOI
VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices
TL;DR: In this paper, a low-voltage low-power nonvolatile floating-gate memory device operation can be achieved by using alternative tunnel barriers consisting of at least two dielectric layers with different dielectrics constants k.