Journal ArticleDOI
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Weizong Xu,Ya-Ting Shi,Fang-Fang Ren,Dong Zhou,Linlin Su,Qing Liu,Liang Cheng,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu +11 more
TLDR
In this article, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated with an optimized implantation and annealing process.Abstract:
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 12×104, and high photoresponsivity of 035 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electric-field-assisted photocarrier hopping is proposed The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodesread more
Citations
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Journal ArticleDOI
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W
Haochen Zhang,Fangzhou Liang,Kang Song,Chong Xing,Danhao Wang,Huabin Yu,Chen Huang,Yue Sun,Lei Yang,Xiaolong Zhao,Haiding Sun,Shibing Long +11 more
TL;DR: In this article, a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration was demonstrated.
Journal ArticleDOI
A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater
Jianwen Sun,Shuo Zhang,Teng Zhan,Zewen Liu,Junxi Wang,Xiaoyan Yi,Jinmin Li,Pasqualina M. Sarro,Guoqi Zhang +8 more
TL;DR: In this paper, a high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time.
Journal ArticleDOI
Nonequilibrium hot-electron-induced wavelength-tunable incandescent-type light sources
Abstract: The collective oscillation of electrons located in the conduction band of metal nanostructures being still energized, with the energy up to the bulk plasmon frequency, are called nonequilibrium hot electrons. It can lead to the state-filling effect in the energy band of the neighboring semiconductor. Here, we report on the incandescent-type light source composed of Au nanorods decorated with single Ga-doped ZnO microwire (AuNRs@ZnO:Ga MW). Benefiting from Au nanorods with controlled aspect ratio, wavelength-tunable incandescent-type lighting was achieved, with the dominating emission peaks tuning from visible to near-infrared spectral regions. The intrinsic mechanism was found that tunable nonequilibrium distribution of hot electrons in ZnO:Ga MW, injected from Au nanorods, can be responsible for the tuning emission features. Apart from the modification over the composition, bandgap engineering, doping level, etc., the realization of electrically driving the generation and injection of nonequilibrium hot electrons from single ZnO:Ga MW with Au nanostructure coating may provide a promising platform to construct electronics and optoelectronics devices, such as electric spasers and hot-carrier-induced tunneling diodes.
Journal ArticleDOI
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform.
TL;DR: In this article, a monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN-/GaN epi-structures grown on Si.
Journal ArticleDOI
Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector
TL;DR: In this paper, an AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet photodetector employing lateral Schottky contacts was fabricated and characterized at different temperatures.
References
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A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response.
TL;DR: This work states that nanostructured ZnO is an increasingly well-studied material for optoelectronic devices due to its wide bandgap, its high exciton binding energy, and the chemical and radiation hardness of the material.
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Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.
Ya-Qing Bie,Zhi-Min Liao,Hongzhou Zhang,Guangru Li,Yu Ye,Yang-Bo Zhou,Jun Xu,Zhi-Xin Qin,Lun Dai,Dapeng Yu +9 more
TL;DR: Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated.
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Hopping conduction in amorphous solids
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III nitrides and UV detection
TL;DR: In this paper, materials and devices issues are considered to provide a full picture of the advances in nitride UV photodetection, including basic structures like photoconductors, Schottky, p-i-n and metal-semiconductor-metal photodiodes and phototransistors.
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High Voltage Vertical GaN p-n Diodes With Avalanche Capability
TL;DR: In this article, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed, and the measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm2.