Journal ArticleDOI
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
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TLDR
In this article, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed, and the measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm2.Abstract:
In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm2. This performance places these structures beyond the SiC theoretical limit on the power device figure of merit chart. Contrary to common belief, GaN devices do possess avalanche capability. The temperature coefficient of the breakdown voltage is positive, showing that the breakdown is indeed because of impact ionization and avalanche. This is an important property of the device for operation in inductive switching environments. Critical electric field and mobility parameters for epitaxial GaN layers grown on bulk GaN are extracted from electrical measurements. The reverse recovery time of the vertical GaN p-n diode is not discernible because it is limited by capacitance rather than minority carrier storage, and because of this its switching performance exceeds the highest speed silicon diode.read more
Citations
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Vertical Power p-n Diodes Based on Bulk GaN
TL;DR: In this article, vertical p-n diodes fabricated on pseudobulk low defect density GaN substrates are discussed, with drift layer thicknesses of 6 to 40 µm and net carrier electron concentrations of $4\times 10^{15}$ to $2.5 µm.
Journal ArticleDOI
1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
Hui Nie,Quentin Diduck,Brian Joel Alvarez,Andrew P. Edwards,Brendan M. Kayes,Ming Zhang,Gangfeng Ye,Thomas Prunty,Dave Bour,Isik C. Kizilyalli +9 more
TL;DR: In this paper, vertical GaN transistors fabricated on bulk GaN substrates are discussed and a threshold voltage of 0.5 V and saturation current > 2.3 A are demonstrated.
Journal ArticleDOI
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
Hiroshi Ohta,Naoki Kaneda,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima,Tohru Nakamura +6 more
TL;DR: In this article, the Si-doping concentration of the top n-GaN drift layer adjacent to the p-n junction was reduced using well-controlled metal-organic vapor phase epitaxy systems.
References
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Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.
Journal ArticleDOI
Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
Journal ArticleDOI
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Yu Saitoh,Kazuhide Sumiyoshi,Masaya Okada,Taku Horii,Tomihito Miyazaki,Hiromu Shiomi,Masaki Ueno,Koji Katayama,Makoto Kiyama,Takao Nakamura +9 more
TL;DR: In this article, a high quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements.
Journal ArticleDOI
High Breakdown ( $> \hbox{1500\ V}$ ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Bin Lu,Tomas Palacios +1 more
TL;DR: In this article, the authors present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates.
Journal ArticleDOI
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
İsmail H. Oğuzman,İsmail H. Oğuzman,Enrico Bellotti,Kevin F. Brennan,Ján Kolník,R. Wang,P. Paul Ruden +6 more
TL;DR: In this paper, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented using an ensemble Monte Carlo simulation including full details of all of the relevant valence bands, derived from an empirical pseudopotential approach, for each crystal type.