Memristive-based in-memory computing: from device to large-scale CMOS integration
E Perez-Bosch Quesada,Eduardo Perez,M Kalishettyhalli Mahadevaiah,Christian Wenger +3 more
- Vol. 1, Iss: 2, pp 024006
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The article was published on 2021-11-18 and is currently open access. It has received 1 citations till now. The article focuses on the topics: Scale (ratio).read more
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Implementation of Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices in Circuit Simulations
Carl Bischoff,Jakob Leise,Emilio Perez-Bosch Quesada,Eduardo Perez,Christian Weber,Alexander Kloes +5 more
TL;DR: In this paper , a statistical procedure for the extraction of parameters of a compact model for memristive devices is presented, in which the typical fluctuations of the currentvoltage (I-V) characteristics from D2D and from cycle-to-cycle (C2C) can be emulated.
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Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
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TL;DR: The relevant virtues and limitations of these devices are assessed, in terms of properties such as conductance dynamic range, (non)linearity and (a)symmetry of conductance response, retention, endurance, required switching power, and device variability.
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The mechanism of electroforming of metal oxide memristive switches
Jianhua Yang,Feng Miao,Matthew D. Pickett,Douglas A. A. Ohlberg,Duncan Stewart,Chun Ning Lau,R. Stanley Williams +6 more
TL;DR: The nature of the oxide electroforming as an electro-reduction and vacancy creation process caused by high electric fields and enhanced by electrical Joule heating is explained with direct experimental evidence.
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Thermochemical description of dielectric breakdown in high dielectric constant materials
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On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization
TL;DR: In this paper, the authors investigated the origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) and found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances.