Journal ArticleDOI
Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
Abubakkar Siddik,Prabir Kumar Haldar,Tufan Paul,Ujjal Das,A. Barman,Asim Roy,Pranab Kumar Sarkar +6 more
TLDR
The environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors for the development of next-generation flexible electronics.Abstract:
Recently, several types of lead halide perovskites have been actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current–voltage hysteresis along with the feasibility of fabrication, low-temperature processability and superior charge mobility. However, the toxicity and environmental pollution potential of lead halide perovskites severely restrict their large-scale commercial prospects. In the present work, the environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors. Ag/CsSnCl3/ITO devices demonstrate bipolar RS with excellent electrical properties such as forming free characteristics, good uniformity, low operating voltages, a high ON/OFF ratio (102) and a long retention time (>104 s). The RS mechanism has been well explained in the outline of electric field-induced formation and rupture of Ag filaments in the CsSnCl3 layer. The metallic nature of the conducting filament has been further confirmed by temperature-dependent variation of low and high resistance states. Additionally, various pulse measurements have been carried out to mimic some of the basic synaptic functions including postsynaptic current, paired-pulse facilitation, long-term potentiation and long-term depression under normal as well as bending conditions. Our work provides the opportunity for exploring artificial synapses based on lead-free halide perovskites for the development of next-generation flexible electronics.read more
Citations
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Journal ArticleDOI
Nanostructured perovskites for nonvolatile memory devices.
TL;DR: In this paper , a review of perovskite-based eNVMs (memristors and field effect transistors) and their potentialities in storage or neuromorphic computing is presented.
Journal ArticleDOI
Halide Perovskites for Resistive Switching Memory.
TL;DR: In this paper, a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications is provided, as well as the challenges, such as the quality and reliability of memory performance, and clarification of the switching mechanism.
Journal Article
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device C
Yiming Sun,Meiqian Tai,Cheng Song,Ziyu Wang,Jun Yin,Fan Li,Huaqiang Wu,Zeng Fei,Hong Lin,Feng Pan +9 more
TL;DR: In this article, the competition between metallic and vacancy defect conductive filaments (CFs) was investigated in a resistive random access memory (RNA) cell with the top electrode and memory medium.
Journal ArticleDOI
Advances in Flexible Memristors with Hybrid Perovskites.
TL;DR: In this paper, the state of the art of perovskite-based flexible memristors is comprehensively and systematically reviewed, and the stability factors of flexible memrristors are discussed.
Journal ArticleDOI
Lead-free CsSnCl3 perovskite nanocrystals: rapid synthesis, experimental characterization and DFT simulations
TL;DR: In this article, the authors have successfully synthesized thermally stable cubic phase cesium tin chloride (CsSnCl3) perovskite nanocrystals with improved surface morphology by adopting a rapid hot-injection technique.
References
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Raisul Islam,Haitong Li,Pai-Yu Chen,Weier Wan,Hong-Yu Chen,Bin Gao,Huaqiang Wu,Shimeng Yu,Krishna C. Saraswat,H-S Philip Wong +9 more
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Journal ArticleDOI
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TL;DR: In this paper, the structural and optical properties of varying compositions of lead free inorganic perovskite (CsSnX3 (X = Br, Cl, I)) and its tunable photoluminescence covering the entire visible to near-IR region were reported.
Journal ArticleDOI
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device
Yiming Sun,Meiqian Tai,Cheng Song,Ziyu Wang,Jun Yin,Fan Li,Huaqiang Wu,Fei Zeng,Hong Lin,Feng Pan +9 more
TL;DR: In this paper, the competition between metallic and vacancy defect conductive filaments (CFs) was investigated in a resistive random access memory (R-RAM) cell, where Ag and CH3NH3PbI3 serve as the top electrode and memory medium, respectively.
Journal ArticleDOI
Soft-packaged sensory glove system for human-like natural interaction and control of prosthetic hands
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