Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
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In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.Abstract:
electrets. In this Communication, we report on OFET memory devices built on silicon wafers and based on films of pentacene and an SiO2 gate insulator that are separated by a thin layer of poly(a-methylstyrene) (PaMS), which acts as a polymeric gate dielectric. This OFET memory device displayed reversible shifts in the threshold voltage (VTh) when an appropriate gate voltage (Vg) was applied above a certain threshold via a relatively short switching time. Based on these reversible shifts in VTh, a non-volatile organic memory was demonstrated that takes advantage of the simple configuration of a typical OFET. This device showed a large memory window (about 90 V), a high on/off ratio (IOn/IOff) (10 5 ), a short switching time (less than 1 ls), and a long retention time (more than 100 h). These memory characteristics were obtained only when an appropriate polymeric gate electret layer (e.g., PaMS) was inserted between the SiO2 gate insulator and the pentacene channel in the typical OFET structure. Therefore, it is possible that this behavior originates from the modulation of the gate field by stored charges in the polymeric gate electret. Detailed reasons for these results and a possible operating mechanism for our OFET memory device are discussed. A cross-sectional view of the fabricated device structure is shown in Figure 1a. Further details concerning the fabrication of this device are discussed in the Experimental section. Figure 1b and c shows the output and transfer characteristics of the devices, respectively. The results indicate reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices. [14] From the conventional characterization equation, [15] the measured values of the typical field-effect mobility (lFET), VTh, and IOn/IOff were 0.51 cm 2 V –1 s –1 (maximum value, 0.89 cm 2 V –1 s –1 ), – 19 V, and 10 5 , respectively. These transistor properties couldread more
Citations
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Journal ArticleDOI
Dielectric relaxation dependent memory elements in pentacene/[6,6]-phenyl-C61-butyric acid methyl ester bi-layer field effect transistors
TL;DR: In this paper, a pentacene/[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) bi-layer field effect transistor (FET) featuring large hysteresis that can be used as memory elements.
Journal ArticleDOI
Ion Gel Gate Dielectrics for Polymer Non-volatile Transistor Memories
Boeun Cho,Moon-Sung Kang +1 more
Patent
Organic non-volatile memory device
TL;DR: In this paper, an organic memory element consisting of an organic semiconductor material, a gate dielectric stack comprising a barrier layer acting as an organic material, and a gate electrode was introduced.
Journal Article
Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors
Heisuke Sakai,Heajeong Cheong,Takehito Kodzasa,Hideo Tokuhisa,Kazuhiko Tokoro,Manabu Yoshida,Taihei Ikoga,Kazuki Nakamura,Norihisa Kobayashi,Sei Uemura +9 more
TL;DR: In this paper, the authors demonstrated organic field effect transistors (OFETs) using nylon 11, poly(γ-methyl-l-glutamate) (PMLG), and poly(e-benzyloxycarbonyl-l -lysine) [Plys(z)] as gate dielectrics.
Journal ArticleDOI
Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors
TL;DR: In this paper , the authors observed that the VTH of polymer OFETs with the widely investigated device structure of a SiO2 bottom-gate dielectric is noticeably shifted by pre-applying a large gate voltage.
References
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Journal ArticleDOI
The path to ubiquitous and low-cost organic electronic appliances on plastic
TL;DR: The future holds even greater promise for this technology, with an entirely new generation of ultralow-cost, lightweight and even flexible electronic devices in the offing, which will perform functions traditionally accomplished using much more expensive components based on conventional semiconductor materials such as silicon.
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Device Physics of Solution‐Processed Organic Field‐Effect Transistors
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Journal ArticleDOI
The Physics of Ferroelectric Memories
TL;DR: In this article, the authors describe a scenario where they are in the last stages of typing their thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon.