Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
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In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.Abstract:
electrets. In this Communication, we report on OFET memory devices built on silicon wafers and based on films of pentacene and an SiO2 gate insulator that are separated by a thin layer of poly(a-methylstyrene) (PaMS), which acts as a polymeric gate dielectric. This OFET memory device displayed reversible shifts in the threshold voltage (VTh) when an appropriate gate voltage (Vg) was applied above a certain threshold via a relatively short switching time. Based on these reversible shifts in VTh, a non-volatile organic memory was demonstrated that takes advantage of the simple configuration of a typical OFET. This device showed a large memory window (about 90 V), a high on/off ratio (IOn/IOff) (10 5 ), a short switching time (less than 1 ls), and a long retention time (more than 100 h). These memory characteristics were obtained only when an appropriate polymeric gate electret layer (e.g., PaMS) was inserted between the SiO2 gate insulator and the pentacene channel in the typical OFET structure. Therefore, it is possible that this behavior originates from the modulation of the gate field by stored charges in the polymeric gate electret. Detailed reasons for these results and a possible operating mechanism for our OFET memory device are discussed. A cross-sectional view of the fabricated device structure is shown in Figure 1a. Further details concerning the fabrication of this device are discussed in the Experimental section. Figure 1b and c shows the output and transfer characteristics of the devices, respectively. The results indicate reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices. [14] From the conventional characterization equation, [15] the measured values of the typical field-effect mobility (lFET), VTh, and IOn/IOff were 0.51 cm 2 V –1 s –1 (maximum value, 0.89 cm 2 V –1 s –1 ), – 19 V, and 10 5 , respectively. These transistor properties couldread more
Citations
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High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric
Yiru Wang,Youbin Yang,Ping Ding,Qi Wei,Xu Gao,Sui-Dong Wang,Chang Liu,Aidong Li,Jiang Yin,Yidong Xia,Zhiguo Liu +10 more
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Multi-layered nanocomposite dielectrics for high density organic memory devices
TL;DR: In this paper, double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP) were fabricated for organic memory devices with metal-pentacene-insulator-silicon structure.
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Ionic liquid thin layer-induced memory effects in organic field-effect transistors.
TL;DR: This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices.
Journal ArticleDOI
Bulky side chain effect of poly(N -vinylcarbazole)-based stacked polymer electrets on device performance parameters of transistor memories
Li Yabin,Feng Quanyou,Haifeng Ling,Yong-Zheng Chang,Zhengdong Liu,Liu Hui,Linghai Xie,Chengrong Yin,Mingdong Yi,Wei Huang,Wei Huang +10 more
TL;DR: In this article, three poly(N-vinylcarbazole) (PVK)-based polymer electrets were synthesized through Friedel-Crafts postfunctionalization for the function of charge storage in nonvolatile organic field effect transistor (OFET) memory devices.
Journal ArticleDOI
Gate‐Deterministic Remote Doping Enables Highly Retentive Graphene‐MXene Hybrid Memory Devices on Plastic
Seong-Won Kim,Sae Byeok Jo,Jihyun Kim,Dongjoon Rhee,Yoon Young Choi,Do Hwan Kim,Joohoon Kang,Jeong Ho Cho +7 more
TL;DR: In this article , a highly retentive and synaptic functional transistor memory device architecture based on the gate-deterministic remote doping of graphene via surface-oxidized Ti3C2TX MXene nano-floating gates was presented.
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