Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
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In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.Abstract:
electrets. In this Communication, we report on OFET memory devices built on silicon wafers and based on films of pentacene and an SiO2 gate insulator that are separated by a thin layer of poly(a-methylstyrene) (PaMS), which acts as a polymeric gate dielectric. This OFET memory device displayed reversible shifts in the threshold voltage (VTh) when an appropriate gate voltage (Vg) was applied above a certain threshold via a relatively short switching time. Based on these reversible shifts in VTh, a non-volatile organic memory was demonstrated that takes advantage of the simple configuration of a typical OFET. This device showed a large memory window (about 90 V), a high on/off ratio (IOn/IOff) (10 5 ), a short switching time (less than 1 ls), and a long retention time (more than 100 h). These memory characteristics were obtained only when an appropriate polymeric gate electret layer (e.g., PaMS) was inserted between the SiO2 gate insulator and the pentacene channel in the typical OFET structure. Therefore, it is possible that this behavior originates from the modulation of the gate field by stored charges in the polymeric gate electret. Detailed reasons for these results and a possible operating mechanism for our OFET memory device are discussed. A cross-sectional view of the fabricated device structure is shown in Figure 1a. Further details concerning the fabrication of this device are discussed in the Experimental section. Figure 1b and c shows the output and transfer characteristics of the devices, respectively. The results indicate reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices. [14] From the conventional characterization equation, [15] the measured values of the typical field-effect mobility (lFET), VTh, and IOn/IOff were 0.51 cm 2 V –1 s –1 (maximum value, 0.89 cm 2 V –1 s –1 ), – 19 V, and 10 5 , respectively. These transistor properties couldread more
Citations
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Journal ArticleDOI
Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices
TL;DR: In this paper, the synthesis and characterization of a pair of pentafluorosulfanylated styrenic polymers and their subsequent application in nonvolatile organic field effect transistor (OFET) memory devices are reported.
Journal ArticleDOI
An organic charge trapping memory transistor with bottom source and drain contacts
Maarten Debucquoy,Maarten Debucquoy,Dieter Bode,Dieter Bode,Jan Genoe,Gerwin H. Gelinck,Paul Heremans,Paul Heremans +7 more
TL;DR: In this article, an organic charge trapping memory transistor with bottom source and drain contacts is presented, which can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.
Journal ArticleDOI
High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer
TL;DR: In this article, the authors demonstrate a high reliable and stable organic field effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer.
Journal ArticleDOI
Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers
TL;DR: In this article, a nonvolatile memory device based on the pentacene film and controlled gold nanoparticle (Au np )/polymer composite layers was developed, which exhibited controllable and reliable current level differences according to the applied gate voltages (programming/erasing operations).
Journal ArticleDOI
From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport
Waner He,Wenchao Xu,Huixin He,Xiaosai Jing,Chuan Liu,Jiajun Feng,Chunlai Luo,Zhen Fan,Sujuan Wu,Jinwei Gao,Guofu Zhou,Xubing Lu,Jun-Ming Liu +12 more
TL;DR: In this paper, the authors investigated the device physics of PEM devices with poly(α-methylstyrene) as a charge trapping layer and pentacene as a semiconductor channel.
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