Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
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In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.Abstract:
electrets. In this Communication, we report on OFET memory devices built on silicon wafers and based on films of pentacene and an SiO2 gate insulator that are separated by a thin layer of poly(a-methylstyrene) (PaMS), which acts as a polymeric gate dielectric. This OFET memory device displayed reversible shifts in the threshold voltage (VTh) when an appropriate gate voltage (Vg) was applied above a certain threshold via a relatively short switching time. Based on these reversible shifts in VTh, a non-volatile organic memory was demonstrated that takes advantage of the simple configuration of a typical OFET. This device showed a large memory window (about 90 V), a high on/off ratio (IOn/IOff) (10 5 ), a short switching time (less than 1 ls), and a long retention time (more than 100 h). These memory characteristics were obtained only when an appropriate polymeric gate electret layer (e.g., PaMS) was inserted between the SiO2 gate insulator and the pentacene channel in the typical OFET structure. Therefore, it is possible that this behavior originates from the modulation of the gate field by stored charges in the polymeric gate electret. Detailed reasons for these results and a possible operating mechanism for our OFET memory device are discussed. A cross-sectional view of the fabricated device structure is shown in Figure 1a. Further details concerning the fabrication of this device are discussed in the Experimental section. Figure 1b and c shows the output and transfer characteristics of the devices, respectively. The results indicate reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices. [14] From the conventional characterization equation, [15] the measured values of the typical field-effect mobility (lFET), VTh, and IOn/IOff were 0.51 cm 2 V –1 s –1 (maximum value, 0.89 cm 2 V –1 s –1 ), – 19 V, and 10 5 , respectively. These transistor properties couldread more
Citations
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Journal ArticleDOI
Phthalocyanine‐Cored Star‐Shaped Polystyrene for Nano Floating Gate in Nonvolatile Organic Transistor Memory Device
Junko Aimi,Chen-Tsyr Lo,Hung-Chin Wu,Chih-Feng Huang,Takashi Nakanishi,Masayuki Takeuchi,Wen-Chang Chen +6 more
TL;DR: In this article, a non-volatile organic memory device is developed based on an organic field effect transistor (OFET) with a dielectric layer of a four-armed, star-shaped polymer featuring a copper phthalocyanine (CuPc) core.
Journal ArticleDOI
Programmable memory in organic field-effect transistor based on lead phthalocyanine
TL;DR: A nonvolatile organic field effect transistor (OFET) with a polymeric electret as gate insulator and a spun cast film of lead phthalocyanine (PbPc) as semiconductor channel is reported in this paper.
Journal ArticleDOI
Self‐Assembled Nanowires of Organic n‐Type Semiconductor for Nonvolatile Transistor Memory Devices
TL;DR: In this paper, the effects of nanowire dimension and silane surface treatment on the memory characteristics are explored, and the memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 104 and the long retention time (104 s).
Journal ArticleDOI
Organic Memory Device Based on Carbazole‐Substituted Cellulose
Makoto Karakawa,Makoto Karakawa,Masayuki Chikamatsu,Yuji Yoshida,Reiko Azumi,Kiyoshi Yase,Chikanobu Nakamoto +6 more
TL;DR: In this article, the photoluminescence spectrum of the as-cast film of the cellulose derivative exhibits sharp peaks with a well-defined vibronic structure, which indicates that the interaction between carbazole groups is rather weak.
Journal ArticleDOI
High performance nonvolatile transistor memories of pentacene using the electrets of star-branched p-type polymers and their donor–acceptor blends
Yu-Cheng Chiu,Tzu-Ying Chen,Chu-Chen Chueh,Hung Yu Chang,Kenji Sugiyama,Yu Jane Sheng,Akira Hirao,Wen-Chang Chen +7 more
TL;DR: In this paper, a pentacene-based nonvolatile field effect transistor (FET) memory utilizing novel electrets consisting of star-branched p-type polymers, polystyrene para-substituted oligofluorenes (P(StFl)n), and their hybrids with n-type PCBM was demonstrated.
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