Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
Reads0
Chats0
TLDR
In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.Abstract:
electrets. In this Communication, we report on OFET memory devices built on silicon wafers and based on films of pentacene and an SiO2 gate insulator that are separated by a thin layer of poly(a-methylstyrene) (PaMS), which acts as a polymeric gate dielectric. This OFET memory device displayed reversible shifts in the threshold voltage (VTh) when an appropriate gate voltage (Vg) was applied above a certain threshold via a relatively short switching time. Based on these reversible shifts in VTh, a non-volatile organic memory was demonstrated that takes advantage of the simple configuration of a typical OFET. This device showed a large memory window (about 90 V), a high on/off ratio (IOn/IOff) (10 5 ), a short switching time (less than 1 ls), and a long retention time (more than 100 h). These memory characteristics were obtained only when an appropriate polymeric gate electret layer (e.g., PaMS) was inserted between the SiO2 gate insulator and the pentacene channel in the typical OFET structure. Therefore, it is possible that this behavior originates from the modulation of the gate field by stored charges in the polymeric gate electret. Detailed reasons for these results and a possible operating mechanism for our OFET memory device are discussed. A cross-sectional view of the fabricated device structure is shown in Figure 1a. Further details concerning the fabrication of this device are discussed in the Experimental section. Figure 1b and c shows the output and transfer characteristics of the devices, respectively. The results indicate reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices. [14] From the conventional characterization equation, [15] the measured values of the typical field-effect mobility (lFET), VTh, and IOn/IOff were 0.51 cm 2 V –1 s –1 (maximum value, 0.89 cm 2 V –1 s –1 ), – 19 V, and 10 5 , respectively. These transistor properties couldread more
Citations
More filters
Journal ArticleDOI
Control of thin ferroelectric polymer films for non-volatile memory applications
TL;DR: In this paper, the authors present the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between metal or semiconductor, crystallization and crystal orientation.
Journal ArticleDOI
Organic field-effect transistors and memory elements using deoxyribonucleic acid (DNA) gate dielectric
Philipp Stadler,Kerstin Oppelt,Thokchom Birendra Singh,James G. Grote,Reinhard Schwödiauer,Siegfried Bauer,Heidi Piglmayer-Brezina,Dieter Bäuerle,Niyazi Serdar Sariciftci +8 more
TL;DR: In this article, the deoxyribonucleic acid (DNA) bio-polymers derived from fish waste products are employed as gate dielectric in n-type methanofullerene and p-type pentacene based organic field effect transistors working at low voltage levels and low gate leakage currents.
Journal ArticleDOI
Manipulating the Hysteresis in Poly(vinyl alcohol)‐Dielectric Organic Field‐Effect Transistors Toward Memory Elements
TL;DR: The origins of hysteresis in organic field effect transistors (OFETs) and their applications in organic memory devices are investigated in this article, where it is found that the orientations of the hydroxyl groups in polyvinyl alcohol (PVA) gate dielectrics are correlated with transfer characteristics in pentacene-based OFETs under the forward and backward scan.
Journal ArticleDOI
Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: high mobility n-channel, ambipolar and nonvolatile devices
TL;DR: A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film as mentioned in this paper.
Journal ArticleDOI
Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers
TL;DR: Controlled gold nanoparticle (AuNP)-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers.
References
More filters
Journal ArticleDOI
The path to ubiquitous and low-cost organic electronic appliances on plastic
TL;DR: The future holds even greater promise for this technology, with an entirely new generation of ultralow-cost, lightweight and even flexible electronic devices in the offing, which will perform functions traditionally accomplished using much more expensive components based on conventional semiconductor materials such as silicon.
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Device Physics of Solution‐Processed Organic Field‐Effect Transistors
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Journal ArticleDOI
The Physics of Ferroelectric Memories
TL;DR: In this article, the authors describe a scenario where they are in the last stages of typing their thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon.