Journal ArticleDOI
Photoluminescent properties of copper-doped zinc oxide nanowires
TLDR
In this article, copper-doped zinc oxide nanowires were fabricated on a copper-coated silicon substrate by sintering a mixture of zinc oxide and graphite powders at high temperature.Abstract:
Copper-doped zinc oxide nanowires were fabricated on copper-coated silicon substrate by sintering a mixture of zinc oxide and graphite powders at high temperature. Copper functioned as a catalyst in the zinc oxide nanowire growth and was incorporated during the growth as a dopant. The size of copper-doped zinc oxide nanowires ranges from 30 to 100 nm in diameter and tens to hundreds of microns in length. The photoluminescent excitation spectra showed multiple absorption peaks in the ultraviolet and blue/green region. Correspondingly, broad and continuous photoluminescence spectra were observed extending from the ultraviolet to the red region with shoulder peaks at room temperature, which is different from that of the bulk. The x-ray photoelectron spectroscopy and low temperature photoluminescence were employed to analyse the luminescent mechanism.read more
Citations
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ZnO - nanostructures, defects, and devices
TL;DR: ZnO has received much attention over the past few years because it has a wide range of properties that depend on doping, including a range of conductivity from metallic to insulating (including n-type and p-type conductivity), high transparency, piezoelectricity, widebandgap semiconductivity, room-temperature ferromagnetism, and huge magneto-optic and chemical-sensing effects.
Journal ArticleDOI
Optical properties of ZnO nanostructures.
TL;DR: A review of current research on the optical properties of ZnO nanostructures and results of nonlinear optical studies, such as second-harmonic generation, are presented.
Journal ArticleDOI
Size dependence of nanostructures: Impact of bond order deficiency
Chang Q. Sun,Chang Q. Sun +1 more
TL;DR: The BOLS correlation mechanism has been initiated and intensively verified as discussed by the authors, which has enabled the tunability of a variety of properties of a nanosolid to be universally reconciled to the effect of bond order deficiency of atoms at sites surrounding defects or near the surface edges of the nano-material.
Journal ArticleDOI
Nanostructured SnO2–ZnO Heterojunction Photocatalysts Showing Enhanced Photocatalytic Activity for the Degradation of Organic Dyes
M. T. Uddin,Yohann Nicolas,Céline Olivier,Thierry Toupance,Laurent Servant,Mathis M. Müller,Hans-Joachim Kleebe,Jürgen Ziegler,Wolfram Jaegermann +8 more
TL;DR: The heterostructure SnO(2)-ZnO photocatalyst showed much higher photocatalytic activities for the degradation of methylene blue than those of individual Sno(2) and ZnO nanomaterials and could be easily recycled several times opening new avenues for potential industrial applications.
Journal ArticleDOI
Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation
TL;DR: The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-dopes, probably due to the larger charge density of Sn.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport
TL;DR: In this paper, the capacitance matrix was calculated for different chain lengths using the software package FastCap MIT (1992) and a ligand shell dielectric constant of 3.14 aF.
Journal ArticleDOI
Green luminescent center in undoped zinc oxide films deposited on silicon substrates
Bixia Lin,Zhuxi Fu,Yunbo Jia +2 more
TL;DR: The photoluminescence (PL) spectra of undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied in this paper, where two emission peaks, centered at 3.18 eV and 2.38 eV, were found to correspond to oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
Journal ArticleDOI
Raman Effect in Zinc Oxide
TL;DR: In this paper, the frequency and symmetry character of the fundamental modes of the Raman effect in zinc oxide has been determined using the continuous helium-neon and ionized argon lasers as sources.