Journal ArticleDOI
Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories
TLDR
In this paper, a pentacene-based organic field effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions.About:
This article is published in Organic Electronics.The article was published on 2014-10-01. It has received 40 citations till now. The article focuses on the topics: Photon energy & Non-volatile memory.read more
Citations
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Journal ArticleDOI
Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers
TL;DR: This proof-of-concept study is expected to open up new avenues in information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating-gate materials.
Journal ArticleDOI
Novel Photoinduced Recovery of OFET Memories Based on Ambipolar Polymer Electret for Photorecorder Application
Chia-Hui Chen,Yang Wang,Hiroki Tatsumi,Tsuyoshi Michinobu,Shu-Wei Chang,Yu-Cheng Chiu,Yu-Cheng Chiu,Guey-Sheng Liou +7 more
TL;DR: In this paper, a new design concept for novel photoresponsive flash organic field effect transistor (OFET) memory is demonstrated by employing the carbazoledioxazine polymer (Poly CD) as an electret.
Journal ArticleDOI
Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.
Shun-Wen Cheng,Ting Han,Teng-Yung Huang,Yu-Hsin Chang Chien,Cheng-Liang Liu,Ben Zhong Tang,Guey-Sheng Liou +6 more
TL;DR: An AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.
Journal ArticleDOI
Localized Surface Plasmon Resonance-Mediated Charge Trapping/Detrapping for Core–Shell Nanorod-Based Optical Memory Cells
Li Zhou,Su-Ting Han,Shiwei Shu,Jiaqing Zhuang,Yan Yan,Qijun Sun,Ye Zhou,Vellaisamy A. L. Roy +7 more
TL;DR: The phototunable memory property is originated from the multimode localized surface plasmon resonance of Au@Ag NRs, which is in consistent with the experimental results and may open up a new strategy toward developing high-performance optoelectronic devices.
Journal ArticleDOI
Selective Solar-Blind UV Monitoring Based on Organic Field-Effect Transistor Nonvolatile Memories
TL;DR: In this paper, a nonvolatile memory based on organic field effect transistors (OFETs) was proposed to achieve solar-blind UV monitoring, which is well compatible with flexible substrates, and thus could be very useful for portable and/or wearable UV dosimetry.
References
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Journal ArticleDOI
Nonvolatile memory elements based on organic materials
J. C. Scott,L. D. Bozano +1 more
TL;DR: In this article, a review of the materials used in switching devices is presented, focusing particularly on the role of filamentary conduction and deliberately introduced or accidental nanoparticles, and the reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.
Journal ArticleDOI
Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
Journal ArticleDOI
Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory
TL;DR: In this paper, a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported.