Journal ArticleDOI
Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories
TLDR
In this paper, a pentacene-based organic field effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions.About:
This article is published in Organic Electronics.The article was published on 2014-10-01. It has received 40 citations till now. The article focuses on the topics: Photon energy & Non-volatile memory.read more
Citations
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Journal ArticleDOI
Organic field-effect transistor-based flexible sensors
Saravanan Yuvaraja,Ali Nawaz,Qian Liu,Deepak P. Dubal,Sandeep G. Surya,Khaled N. Salama,Prashant Sonar +6 more
TL;DR: This review focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic applications in the past 10 years, and introduces organic semiconductors (OSCs), followed by their applications in various device configurations and their mechanisms.
Journal ArticleDOI
Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
Yu Yang,Qi-Hao Ma,Haifeng Ling,Wen Li,Wen Li,Ruolin Ju,Bian Linyi,Naien Shi,Yan Qian,Mingdong Yi,Linghai Xie,Wei Huang,Wei Huang +12 more
Journal ArticleDOI
Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.
TL;DR: In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
Journal ArticleDOI
Toward non-volatile photonic memory: concept, material and design
TL;DR: Benefiting from its high density, multifunctionality, low power consumption, and multilevel data storage, photonic memory devices hold future promise for built-in, non-volatile memory and reconstructed logic operation and are expected to bridge this capacity gap.
Journal ArticleDOI
Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory.
Haifeng Ling,Jinyi Lin,Mingdong Yi,Bin Liu,Wen Li,Zongqiong Lin,Linghai Xie,Yan Bao,Fengning Guo,Wei Huang,Wei Huang +10 more
TL;DR: Two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers are fabricated, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret.
References
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Journal ArticleDOI
Bias‐Stress‐Induced Charge Trapping at Polymer Chain Ends of Polymer Gate‐Dielectrics in Organic Transistors
TL;DR: In this paper, the bias-stability of polygonal gate dielectrics with various molecular weights (MWs) was investigated and it was shown that the free volumes at polymer chain ends are sufficiently large to allow the residence of water molecules, the presence of which significantly increases the density of charge-trap sites.
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Morphology control of tunneling dielectric towards high-performance organic field-effect transistor nonvolatile memory
TL;DR: In this paper, a high performance organic field effect transistor nonvolatile memory based on nano-floating-gate is reported, which shows a large memory window of about 70 V, high ON/OFF ratio of reading current over 105 after 1-week storage, high field effect mobility of 0.6 cm2/V s, and good programming/erasing/reading endurance.
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Nonvolatile nano-crystal floating gate OFET memory with light assisted program
Hong Wang,Hong Wang,Zhuoyu Ji,Liwei Shang,Yingping Chen,Maixing Han,Xin Liu,Yingquan Peng,Ming Liu +8 more
TL;DR: In this paper, gold nanocrystals based nonvolatile floating gate OFET memory devices with light assisted program were studied and programmable memory characteristics were observed according to the programming/erasing operations and the memory window and on/off memory ratio were dramatically improved from 18V, 102 to 63V, 105 through light assisted programs, respectively.
Journal ArticleDOI
Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3
TL;DR: An organic thin-film transistor memory, based on the pentacene semiconductor/nanoparticle-Al floating-gate/Al2O3 tunneling layer, is demonstrated by a simple fabrication process as mentioned in this paper.
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Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate
TL;DR: In this paper, a hybrid nano-floating-gate was proposed to increase the density of charge trapping sites, which are electrically separate from each other and suppress the stored charge leakage.