Journal ArticleDOI
Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories
TLDR
In this paper, a pentacene-based organic field effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions.About:
This article is published in Organic Electronics.The article was published on 2014-10-01. It has received 40 citations till now. The article focuses on the topics: Photon energy & Non-volatile memory.read more
Citations
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Journal ArticleDOI
Organic field-effect transistor-based flexible sensors
Saravanan Yuvaraja,Ali Nawaz,Qian Liu,Deepak P. Dubal,Sandeep G. Surya,Khaled N. Salama,Prashant Sonar +6 more
TL;DR: This review focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic applications in the past 10 years, and introduces organic semiconductors (OSCs), followed by their applications in various device configurations and their mechanisms.
Journal ArticleDOI
Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
Yu Yang,Qi-Hao Ma,Haifeng Ling,Wen Li,Wen Li,Ruolin Ju,Bian Linyi,Naien Shi,Yan Qian,Mingdong Yi,Linghai Xie,Wei Huang,Wei Huang +12 more
Journal ArticleDOI
Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.
TL;DR: In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
Journal ArticleDOI
Toward non-volatile photonic memory: concept, material and design
TL;DR: Benefiting from its high density, multifunctionality, low power consumption, and multilevel data storage, photonic memory devices hold future promise for built-in, non-volatile memory and reconstructed logic operation and are expected to bridge this capacity gap.
Journal ArticleDOI
Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory.
Haifeng Ling,Jinyi Lin,Mingdong Yi,Bin Liu,Wen Li,Zongqiong Lin,Linghai Xie,Yan Bao,Fengning Guo,Wei Huang,Wei Huang +10 more
TL;DR: Two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers are fabricated, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret.
References
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Journal ArticleDOI
Ambipolar pentacene field-effect transistors with calcium source-drain electrodes
TL;DR: In this article, a field-effect transistor with polycrystalline pentacene films and calcium source-drain electrodes was evaluated in an oxygen-free condition and showed typical ambipolar characteristics and field effect hole mobility of 4.5×10−4cm2/Vs.
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Multibit Storage of Organic Thin‐Film Field‐Effect Transistors
Yunlong Guo,Chong-an Di,Shanghui Ye,Xiangnan Sun,Jian Zheng,Yugeng Wen,Weiping Wu,Gui Yu,Yunqi Liu +8 more
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Contact-metal dependent current injection in pentacene thin-film transistors
TL;DR: In this paper, an exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors.
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Towards printable organic thin film transistor based flash memory devices
Wei Lin Leong,Nripan Mathews,Bertha Tan,Subramanian Vaidyanathan,Florian Dötz,Subodh Mhaisalkar +5 more
TL;DR: In this article, the authors highlight recent research progress made towards organic memory transistors based on charge trapping and focus on the principles and materials (namely, nanoparticles and polymer electrets) for these devices.
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Gate‐Voltage Control of Optically‐ Induced Charges and Memory Effects in Polymer Field‐Effect Transistors
Soumya Dutta,K. S. Narayan +1 more
TL;DR: In this article, a fraction of light-induced drain current in the depletion mode of a polythiophene-based field effect transistor persists after switching off the photoexcitation, and can be erased by reversing the gate voltage (V g ).