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Open AccessJournal ArticleDOI

Polarization controlled photovoltaic and self-powered photodetector characteristics in Pb-free ferroelectric thin film

TLDR
In this article, a switchable and large PV effect is demonstrated in a Pb-free ferroelectric 0.5Ba(Zr0.7Ca0.2Ti0.3)TiO3 (BZT-BCT) thin film fabricated by a pulsed laser deposition technique.
Abstract
Ferroelectrics are considered next generation photovoltaic (PV) materials. In this work, a switchable and large PV effect is demonstrated in a Pb-free ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin film fabricated by a pulsed laser deposition technique. The material shows a remarkable PV output of 0.81 V due to its morphotropic phase boundary composition. The observed PV effect is analyzed on the basis of the interfacial Schottky barrier and bulk depolarization field. The poling dependent PV studies revealed that although the Schottky and depolarization field contribute to the PV effect, the latter dominates the PV response beyond the coercive field. Additionally, the importance of this compound in the field of a self-biased photodetector is elucidated in terms of calculated photodetector parameters such as responsivity and detectivity. The explored results will bring significant advancement in the field of ferroelectric PV, UV solid state detector applications and also give an additional dimension to the multifunctional ability of the BZT-BCT system.

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Citations
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Journal ArticleDOI

Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment

TL;DR: In this paper, metal-semiconductor-metal (MSM) photodetectors are used for optoelectronic integrated circuits (OEICs) because they allow easy integration with a pre-existing circuit.
Journal ArticleDOI

Self-driven ultraviolet photodetectors based on ferroelectric depolarization field and interfacial potential

TL;DR: In this paper, a self-driven photodetector free of the p-n junction on the basis of ferroelectric oxides has been developed, which shows a remarkable responsivity of 0.011 µm/W at zero bias to illumination of 340 nm with fast response rise time of 98 µm and decay time of 96 µm.
References
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Journal ArticleDOI

Large Piezoelectric Effect in Pb-Free Ceramics

TL;DR: It is predicted that the single-crystal form of the MPB composition of the present system may reach a giant d(33) = 1500-2000 pC/N, which may provide a new recipe for designing highly piezoelectric materials (both Pb-free and P b-containing) by searching MPBs starting from a TCP.
Journal ArticleDOI

Switchable ferroelectric diode and photovoltaic effect in BiFeO3.

TL;DR: It is found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional.
Journal ArticleDOI

Above-bandgap voltages from ferroelectric photovoltaic devices

TL;DR: A fundamentally different mechanism for photovoltaic charge separation is reported, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap.
Journal ArticleDOI

High‐voltage bulk photovoltaic effect and the photorefractive process in LiNbO3

TL;DR: An explanation of the photovoltaic effect, based on the asymmetry of the lattice, is proposed in this paper, which accounts for the light-induced index changes in LiNbO3.
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