Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation
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In this paper, a theoretical analysis of negative bias temperature instability (NBTI) over many decades in timescale is presented, where the authors explore the mechanics of time transients of NBTI over many orders of magnitude in time.Abstract:
Recent advances in experimental techniques (on-the- fly and ultrafast techniques) allow measurement of threshold voltage degradation due to negative-bias temperature instability (NBTI) over many decades in timescale Such measurements over wider temperature range (-25degC to 145degC), film thicknesses (12-22 nm of effective oxide thickness), and processing conditions (variation of nitrogen within gate dielectric) provide an excellent framework for a theoretical analysis of NBTI degradation In this paper, we analyze these experiments to refine the existing theory of NBTI to 1) explore the mechanics of time transients of NBTI over many orders of magnitude in time; 2) establish field dependence of interface trap generation to resolve questions regarding the appropriateness of power law versus exponential projection of lifetimes; 3) ascertain the relative contributions to NBTI from interface traps versus hole trapping as a function of processing conditions; and 4) briefly discuss relaxation dynamics for fast-transient NBTI recovery that involves interface traps and trapped holesread more
Citations
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Journal ArticleDOI
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
TL;DR: The present review summarizes the basic principles of how to model stochastic defect transitions with a particular focus on multi-state defects and introduces the relatively simple semiclassical approximation of multiphonon theory, which already provides a much better description.
Journal ArticleDOI
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
Tibor Grasser,Ben Kaczer,Wolfgang Goes,Hans Reisinger,Th. Aichinger,Ph. Hehenberger,P.-J. Wagner,Franz Schanovsky,Jacopo Franco,Maria Toledano Luque,Michael Nelhiebel +10 more
TL;DR: In this paper, the bias temperature instability (BTI) has been known since the 1960s, and a large number of detailed recovery studies have been published, showing clearly that the reaction-diffusion mechanism is inconsistent with the data.
Journal ArticleDOI
A Comparative Study of Different Physics-Based NBTI Models
Souvik Mahapatra,Nilesh Goel,Sujay B. Desai,Shashank Gupta,B. Jose,Subhadeep Mukhopadhyay,K. Joshi,Ankit Jain,Ahmad E. Islam,Muhammad A. Alam +9 more
TL;DR: In this article, different physics-based negative bias temperature instability (NBTI) models as proposed in the literature are reviewed, and the predictive capability of these models is benchmarked against experimental data.
Proceedings ArticleDOI
Ubiquitous relaxation in BTI stressing—New evaluation and insights
Ben Kaczer,Tibor Grasser,Philippe Roussel,Javier Martin-Martinez,Robert O'Connor,Barry O'Sullivan,Guido Groeseneken +6 more
TL;DR: In this article, the ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions, and a technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the unknown relaxation component.
Proceedings ArticleDOI
A two-stage model for negative bias temperature instability
TL;DR: Based on the established properties of the most commonly observed defect in amorphous oxides, the E′ center, the authors suggest a coupled two-stage model to explain the negative bias temperature instability.
References
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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
TL;DR: The negative bias temperature instability (NBTI) commonly observed in p-channel metaloxide-semiconductor field effect transistors when stressed with negative gate voltages at elevated temperatures is discussed in this article.
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