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Rf-powered systems using steep-slope devices

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TLDR
This paper focuses on how steep-slope devices can enhance efficiencies of harvesting ambient RF energy and improve power efficiency of analog and digital computational blocks.
Abstract
Steep-slope tunnel devices promise new opportunities in ultra-low-power computing. This paper focuses on how steep-slope devices can enhance efficiencies of harvesting ambient RF energy and improve power efficiency of analog and digital computational blocks.

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Proceedings ArticleDOI

Architecture exploration for ambient energy harvesting nonvolatile processors

TL;DR: The simulation platform in this paper is calibrated using measured results from a fabricated nonvolatile processor and used to explore the design space for a nonVolatile processor with different architectures, different input power sources, and policies for maximizing forward progress.
Proceedings ArticleDOI

Ambient energy harvesting nonvolatile processors: from circuit to system

TL;DR: New metrics of nonvolatile processors to consider energy harvesting factors for the first time are proposed and the nonvolatility processor design from circuit to system level is explored.
Proceedings ArticleDOI

Nonvolatile memory design based on ferroelectric FETs

TL;DR: This work proposes a 2-transistor (2T) FEFET-based nonvolatile memory with separate read and write paths that achieves non-destructive read and lower write power at iso-write speed compared to standard FE-RAM.
Journal ArticleDOI

Storage-Less and Converter-Less Photovoltaic Energy Harvesting With Maximum Power Point Tracking for Internet of Things

TL;DR: This paper pioneers a converter-less PV power system with the maximum power point tracking that directly supplies power to the load without the power converters or the energy storage element and achieves an 87.1% of overall system efficiency during a day.
Journal ArticleDOI

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

TL;DR: The capability of obtaining a high PCE at a low RF input power range reveals the superiority of the HTFET RF rectifiers for battery-less energy harvesting applications.
References
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Proceedings ArticleDOI

Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

TL;DR: In this paper, a gate-recess process was used to achieve a record on-current of 180 μA/μm at V DS = V GS = 0.5 V with an Ion/Ioff ratio of 6 ×103.
Journal ArticleDOI

A 10b/12b 40 kS/s SAR ADC With Data-Driven Noise Reduction Achieving up to 10.1b ENOB at 2.2 fJ/Conversion-Step

TL;DR: A Data-Driven Noise-Reduction method is introduced to selectively enhance the comparator noise performance in a power-efficient 10/12 bit 40 kS/s SAR ADC for sensor applications.
Journal ArticleDOI

A 9 $\mu$ A, Addressable Gen2 Sensor Tag for Biosignal Acquisition

TL;DR: This tag provides in vivo muscle temperature measurement from an untethered in-flight hawkmoth via ultra-low-power circuitry including a low-noise biosignal amplifier, unique tag ID generator, calibration-free 3 MHz oscillator, and EPC C1 Gen2 protocol compatibility.
Proceedings ArticleDOI

19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

TL;DR: This study develops a swing-sample-andcouple (SSC) voltage-mode sense amplifier (VSA) to overcome (1), enabling 1.8× greater SM for lower RD-VDDMIN and 1.7× faster T-sub>AC across various V, compared to conventional differential-input (CD) VSAs.
Proceedings ArticleDOI

Variation-tolerant ultra low-power heterojunction tunnel FET SRAM design

TL;DR: By benchmarking a variety of TFET-based SRAM cells, the utility of the Schmitt-Trigger feedback mechanism is shown in improving the read/write noise margins, thus enabling ultra low-VCC operation for TFET SRAMs.
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