Self-aligned carbon nanotube transistors with charge transfer doping
TLDR
In this article, a charge transfer p-doping scheme was proposed to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure, which allowed one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON and OFF states.Abstract:
This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion∕Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.read more
Citations
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Journal ArticleDOI
Carbon-based electronics.
TL;DR: This work reviews the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons and suggests that it could be possible to make both electronic and optoelectronic devices from the same material.
PatentDOI
Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
Journal ArticleDOI
Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects
Qing Cao,John A. Rogers +1 more
TL;DR: In this paper, the authors present a review of recent advances in assembly techniques for forming ultrathin carbon nanotubes, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity.
Journal ArticleDOI
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region
Jie Deng,Hon-Sum Philip Wong +1 more
TL;DR: In this paper, a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled carbon-nanotube field effect transistors (CNFETs) is presented.
Journal ArticleDOI
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking
Jie Deng,Hon-Sum Philip Wong +1 more
TL;DR: In this paper, a universal circuit-compatible CNFET model including the practical device nonidealities is implemented with HSPICE, including elastic scattering in the channel region, resistive source/drain (S/D), Schottky-barrier resistance, and parasitic gate capacitances.
References
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Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
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Single-walled carbon nanotube electronics
TL;DR: In this paper, the fabrication and electronic properties of devices based on individual carbon nanotubes are reviewed, and both metallic and semiconducting SWNTs are found to possess electrical characteristics that compare favorably to the best electronic materials available.
Journal ArticleDOI
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
TL;DR: In this article, single-wall carbon nanotube field effect transistors (CNFETs) were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric.
Journal ArticleDOI
Controlling doping and carrier injection in carbon nanotube transistors
TL;DR: In this article, two methods for converting carbon nanotube field effect transistors (CNTFETs) from p-to n-type devices are presented, one involves conventional doping with an electron donor, while the second consists of annealing the contacts in vacuum to remove adsorbed oxygen.
Journal ArticleDOI
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
Ali Javey,Jing Guo,Damon B. Farmer,Qian Wang,Dunwei Wang,Roy G. Gordon,Mark Lundstrom,Hongjie Dai +7 more
TL;DR: In this article, the authors proposed an enhancement-mode semiconducting carbon nanotube field effect transistors (CNTFETs) that combines ohmic metal-tube contacts, highdielectric-constant HfO2 films as gate insulators, and electrostatically doped nanotubes segments as source/drain electrodes.