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Strain-Mediated Spin-Orbit-Torque Switching for Magnetic Memory

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TLDR
In this article, a mechanism for deterministic perpendicular switching is simulated, showing that uniaxial anisotropies like strain-induced magnetoelastic anisotropy can break a system's lateral symmetry and yield field-free switching in SOT devices.
Abstract
Spin-orbit torque (SOT) allows energy-efficient control of magnetism for nonvolatile digital memory. However, deterministic perpendicular switching requires lateral symmetry breaking, and remains a challenge in SOT devices. Here a mechanism for deterministic perpendicular switching is simulated, showing that uniaxial anisotropies like strain-induced magnetoelastic anisotropy can break a system's lateral symmetry and yield field-free switching in SOT devices. This method for electric field control of magnetism may inspire next-generation memory devices such as magnetic random-access memory (MRAM).

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Citations
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Journal ArticleDOI

Spin-orbit torques: Materials, mechanisms, performances, and potential applications

TL;DR: In this article, the authors provide a comprehensive review of recent progress in SOT in various materials, including both spin sources and magnetic functional layers, and discuss its promising applications for nonvolatile SOT-magnetic random access memory and other device configurations.
Journal ArticleDOI

Floquet second-order topological superconductor driven via ferromagnetic resonance

TL;DR: In this paper, the authors considered a triple-layer setup composed of a two-dimensional electron gas with spin-orbit interactions, proximity coupled to an s-wave superconductor and to a ferromagnetic layer driven at resonance.
Journal ArticleDOI

Acoustic control of magnetism toward energy-efficient applications

TL;DR: A comprehensive review of magnetoelastic coupling phenomena and mechanisms, diverse experimental configurations, recent advances in modeling and microscopic tools to intuitively describe them, and the experimental and theoretical exploration of devices and technological innovations are presented.
References
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Journal ArticleDOI

Current-driven excitation of magnetic multilayers

TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
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Emission of spin waves by a magnetic multilayer traversed by a current.

TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
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Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals

TL;DR: In this article, the piezoelectric properties of relaxor based ferroelectric single crystals, such as Pb(Zn1/3Nb2/3)O3 and PbTiO3, were investigated for electromechanical actuators.
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Spin-torque switching with the giant spin hall effect of tantalum

TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
Journal ArticleDOI

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
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