Journal ArticleDOI
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
M.-Y. Ho,Hao Gong,G. D. Wilk,B. Busch,B. Busch,Martin L. Green,W.H. Lin,Alex See,S. K. Lahiri,M. E. Loomans,Petri Räisänen,Torgny Gustafsson +11 more
TLDR
In this article, the authors demonstrate improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of Al2O3.Abstract:
We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of Al2O3. The (HfO2)x(Al2O3)1−x films, deposited using atomic layer deposition, exhibit excellent control over a wide range of composition by a suitable choice of the ratio between the Al and Hf precursor pulses. By this method, extremely predictable hafnium aluminate compositions are obtained, with Hf cation fractions ranging from 20% up to 100%, as measured by medium energy ion scattering. Using x-ray diffraction, we show that (HfO2)x(Al2O3)1−x films with Hf:Al∼3:1 (25% Al) remain amorphous up to 900 °C, while films with Hf:Al∼1:3 (75% Al) remain amorphous after a 1050 °C spike anneal.read more
Citations
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Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
Journal ArticleDOI
High dielectric constant oxides
TL;DR: In this article, the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects are discussed.
Book ChapterDOI
Atomic layer deposition
Mikko Ritala,Markku Leskelä +1 more
TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.
Patent
Formation of boride barrier layers using chemisorption techniques
Jeong Soo Byun,Alfred Mak +1 more
TL;DR: In this paper, a method of forming a boride layer for integrated circuit fabrication is described, which is based on chemisorbing monolayers of boron-containing compound and one refractory metal compound onto a substrate.
Patent
Method for hafnium nitride deposition
TL;DR: In this paper, the authors present a method for forming a high-k dielectric layer, which consists of depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a ha fnium precursor to a surface of the substrate, reacting the haflfium precursor and forming a hafelfium containing layer to the surface.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
Structure and stability of ultrathin zirconium oxide layers on Si(001)
TL;DR: In this paper, the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy was examined.
Journal ArticleDOI
Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
D. A. Neumayer,E. Cartier +1 more
TL;DR: The thermal stability, microstructure, and electrical properties of binary oxides were evaluated to help assess their suitability as a replacement for silicon dioxide gate dielectrics in complementary metal-oxide-semiconductor transistors as discussed by the authors.