Journal ArticleDOI
The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions
J. C. Brighten,I. D. Hawkins,Anthony R. Peaker,R. A. Kubiak,Evan H. C. Parker,Terry E. Whall +5 more
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TLDR
In this paper, the valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 <y<0.14 have been determined by CV measurements and from the analysis of Kroemer.Abstract:
The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0<y<0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.read more
Citations
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Journal ArticleDOI
High-mobility Si and Ge structures
TL;DR: In this article, the structural and electronic properties of lattice-mismatched Si/SiGe heterostructures are discussed in terms of scattering mechanisms and experimental results, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.
Journal ArticleDOI
SiGe heterostructures for FET applications
Terence Whall,Evan H. C. Parker +1 more
TL;DR: In this article, the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed, as well as the application requirements of these devices.
Journal ArticleDOI
Si/SiGe/Si pMOS performance : alloy scattering and other considerations
Terry E. Whall,Evan H. C. Parker +1 more
TL;DR: In this article, the authors argue that current room-temperature field effect device performance is limited by materials quality, particularly interface roughness and compositional inhomogeneity, rather than random alloy scattering.
Journal ArticleDOI
Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors
TL;DR: In this article, an admittance spectroscopy is applied to MOS capacitors fabricated on Si/Si/sub 1-x/Ge/sub x/Si double-heterostructures.
Journal ArticleDOI
High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions
Eddy Simoen,Geert Eneman,M. Bargallo Gonzalez,Daisuke Kobayashi,A. Luque Rodriguez,A. Luque Rodriguez,J. A. Jiménez Tejada,Cor Claeys +7 more
TL;DR: In this paper, different mechanisms impacting the currentvoltage and capacitance voltage characteristics of complementary metal oxide semiconductor (CMOS) compatible p-n junctions are reviewed. But the authors focus on the influence of high doping density/high electric fields, mechanical stress and presence of a hetero-junction either at the junction or in the depletion region.
References
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Journal ArticleDOI
Physics and applications of Ge x Si 1-x /Si strained-layer heterostructures
TL;DR: In this paper, the authors review recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge x Si 1-x /Si strained-layer heterostructures.
Journal ArticleDOI
Measurement of isotype heterojunction barriers by C‐V profiling
TL;DR: In this article, the conduction band discontinuity ΔEc was found to be 0.248 eV, corresponding to about to 0.66 ΔEg rather than Dingle's commonly accepted value 0.85 Δ Eg, attributed to compositional grading during LPE growth.
Journal ArticleDOI
Erratum: Indirect band gap of coherently strained Ge x Si 1 − x bulk alloys on silicon substrates
TL;DR: In this article, it was shown that the coherency strain generated by lattice mismatch dramatically reduces the indirect gap of the alloy, which approaches the gap of unstrained Ge at 0.75.
Journal ArticleDOI
Structure, properties and applications of GexSi1-x strained layers and superlattices
TL;DR: The first successful pseudomorphic GexSi1-x-strained layers on Si were grown in Germany in 1975 and extensive work that has been done on the production, properties and application of gexSi 1-x strained layers and superlattices over the last fifteen years is described in this article.
Journal ArticleDOI
Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
TL;DR: In this article, the electron diffusion coefficient in p-type Si/Si/sub 1-x/Ge/sub x/ layers was analyzed using electrical measurements to determine properties of strained Si/S 1-X/Ge-sub x/.
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