Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

TLDR: In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.

Abstract: Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar.