Journal ArticleDOI
Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features
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TLDR
In this paper, micro-Raman spectroscopy was used to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs.Abstract:
In this paper, we utilize micro-Raman spectroscopy to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical accuracy, precision, and precautions for diverse Raman thermometry methods is developed. Thermometry techniques utilizing shifts in a single Raman Stokes peak position underpredict the channel temperature due to induction of operational thermoelastic stress in operating devices. Utilizing the change in phonon linewidth by employing a proper reference condition gives true temperature results. Making use of frequency shifts in both the E2(high) and A1(LO) phonon modes offers accurate and time-efficient means to determine the state of temperature and thermal stress in operating AlGaN/GaN HEMTs presuming that linear relations between phonon frequencies and temperature/stress are well determined. Useful applications of this method such as monitoring stress in GaN wafers between fabrication steps and Raman thermography on AlGaN/GaN HEMTs are demonstrated.read more
Citations
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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β-Gallium oxide power electronics
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TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
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A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
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Journal ArticleDOI
Near-junction thermal management: thermal conduction in gallium nitride composite substrates
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Journal ArticleDOI
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
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References
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Journal ArticleDOI
Elastic constants of gallium nitride
TL;DR: The elastic constants of GaN have been determined using Brillouin scattering; in GPa they are: C11=390, C33=398, C44=105, C66=123, C12=145, and C13=106.
Journal ArticleDOI
Lattice parameters of gallium nitride
Mike Leszczynski,Henryk Teisseyre,T. Suski,Izabella Grzegory,Michal Bockowski,Jan Jun,S. Porowski,Krzysztof Pakuła,Jacek M. Baranowski,C. T. Foxon,T. S. Cheng +10 more
TL;DR: In this article, the authors measured the lattice parameters of gallium nitride using high-resolution x-ray diffraction and compared the differences between the samples in terms of their concentrations of free electrons and structural defects.
Journal ArticleDOI
Properties of strained wurtzite GaN and AlN: Ab initio studies
TL;DR: In this article, the structural, dielectric, lattice-dynamical, and electronic properties of biaxially-strained group-III nitrides are studied using a pseudopotential-plane-wave method.
Journal ArticleDOI
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
TL;DR: In this paper, the authors report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates.
Journal ArticleDOI
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
V. Yu. Davydov,N. S. Averkiev,I. N. Goncharuk,D. K. Nelson,Irina P. Nikitina,Anatoli Polkovnikov,Alexander N. Smirnov,M. A. Jacobson,O. Semchinova +8 more
TL;DR: In this article, the effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H-SiC substrates by metal organic chemical vapor deposition has been studied.