Journal ArticleDOI
Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions
Lény Baczkowski,Jean-Claude Jacquet,Olivier Jardel,Chistophe Gaquiere,Myriam Moreau,Dominique Carisetti,Laurent Brunel,Franck Vouzelaud,Yves Mancuso +8 more
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TLDR
In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.Abstract:
Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar.read more
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Journal ArticleDOI
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Martin Kuball,James W Pomeroy +1 more
TL;DR: In this paper, the authors review the use of Raman thermography to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution.
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Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
TL;DR: In this paper, the transient temperature rise and thermal time constant spectrum of GaN HEMTs via time-resolved micro-Raman thermometry with a temporal resolution of 30 ns were measured.
Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Journal ArticleDOI
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
TL;DR: In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).
Journal ArticleDOI
Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors
Kevin R. Bagnall,Evelyn N. Wang +1 more
TL;DR: In this article, the authors present a fundamental study of the transient thermal behavior of GaN HEMTs to aid in understanding the complex contributions of multidimensional thermal spreading, multiple epitaxial layers, multiple gate fingers, and thermal boundary resistance to the temperature rise.
References
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Journal ArticleDOI
Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy
TL;DR: In this paper, two typically employed electrical methods were assessed to provide a simple means of extracting average channel temperatures in devices, and they found that electrical methods significantly underestimate peak channel temperatures, due to the fact that electrical techniques measure an average temperature over the entire active device area.
Journal ArticleDOI
Microwave AlGaN/GaN HFETs
TL;DR: In this paper, the operating physics, performance potential, and status of device development of microwave AlGaN/GaN heterostructure field effect transistors are presented. But the authors do not consider the effect of high-current and high-voltage on the performance of these devices.
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SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices
Raphaël Aubry,Jean-Claude Jacquet,John M. R. Weaver,Olivier Durand,Phillip S. Dobson,G. Mills,M.A. di Forte-Poisson,S. Cassette,Sylvain Delage +8 more
TL;DR: In this paper, the authors used scanning thermal microscopy to perform temperature mapping, at variable dc bias points, on an AlGaN/GaN high-electron mobility transistor made on epilayers grown on silicon carbide substrate.
Journal ArticleDOI
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
H. McD. Hobgood,M.F. Brady,W.H. Brixius,G. Fechko,R.C. Glass,D. Henshall,Jason Ronald Jenny,Robert Tyler Leonard,D.P. Malta,Stephan G. Müller,Valeri F. Tsvetkov,Calvin H. Carter +11 more
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Measuring and predicting the thermoreflectance sensitivity as a function of wavelength on encapsulated materials
TL;DR: In this paper, a CCD camera-based thermoreflectance microscope coupled to a grating which disperses white light directly onto the CCD is used to measure the temperature mapping of integrated circuits with submicronic features.