Journal ArticleDOI
Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions
Lény Baczkowski,Jean-Claude Jacquet,Olivier Jardel,Chistophe Gaquiere,Myriam Moreau,Dominique Carisetti,Laurent Brunel,Franck Vouzelaud,Yves Mancuso +8 more
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TLDR
In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.Abstract:
Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar.read more
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Journal ArticleDOI
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Martin Kuball,James W Pomeroy +1 more
TL;DR: In this paper, the authors review the use of Raman thermography to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution.
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Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
TL;DR: In this paper, the transient temperature rise and thermal time constant spectrum of GaN HEMTs via time-resolved micro-Raman thermometry with a temporal resolution of 30 ns were measured.
Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Journal ArticleDOI
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
TL;DR: In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).
Journal ArticleDOI
Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors
Kevin R. Bagnall,Evelyn N. Wang +1 more
TL;DR: In this article, the authors present a fundamental study of the transient thermal behavior of GaN HEMTs to aid in understanding the complex contributions of multidimensional thermal spreading, multiple epitaxial layers, multiple gate fingers, and thermal boundary resistance to the temperature rise.
References
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Journal ArticleDOI
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
Andrei Sarua,Hangfeng Ji,K.P. Hilton,David J. Wallis,Michael J. Uren,Trevor Martin,Martin Kuball +6 more
TL;DR: In this article, the influence of thermal boundary resistance (TBR) on temperature distribution in ungated AlGaN/GaN field effect devices was investigated using 3-D micro-Raman thermography.
Journal ArticleDOI
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
Andrei Sarua,Hangfeng Ji,Martin Kuball,Michael J. Uren,Trevor Martin,K.P. Hilton,R.S. Balmer +6 more
TL;DR: In this article, a self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography.
Journal ArticleDOI
CCD-based thermoreflectance microscopy: principles and applications
M. Farzaneh,Kerry Maize,D Lüerßen,D Lüerßen,J.A. Summers,P. M. Mayer,Peter E. Raad,Kevin P. Pipe,Ali Shakouri,Rajeev J. Ram,Janice Hudgings +10 more
TL;DR: In this article, the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermography in various devices.
Journal ArticleDOI
Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
TL;DR: In this article, a thermal boundary resistance (TBR) is associated with the presence of an AlN nucleation layer (NL) in AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on SiC substrates.
Journal ArticleDOI
Quantitative thermal imaging by synchronous thermoreflectance with optimized illumination wavelengths
TL;DR: In this paper, the photothermal response of an integrated circuit working at frequencies between 0.1 Hz and 5 MHz was measured and explained using a thermocouple. But the authors did not consider the effect of a passivation layer.