Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Characterization and Modeling of an Electro-thermal
Peter G. Szabo,Vladimir Szekely +1 more
TL;DR: In this article, the authors present the analysis of a Quadratic Transfer Characteristic (QTC) element from different perspectives, where they measured a few secondary properties of the structure which correspond to special behaviour because these properties can not be easily derived from the main characteristics.
Proceedings ArticleDOI
Properties of SiGe microcrystals in strong magnetic fields for thermoelectric sensors
TL;DR: In this article, the effects of strain and elemental composition on thermoelectric properties of SiGe microwires for sensor applications at the influence of strong magnetic fields have been performed.
Considering Heat Flow for a DMOS Device
C. M. Liu,J. B. Kuo,Y. P. Wu +2 more
TL;DR: In this article, an analytical quasi-saturation model considering heat flow for a DMOS device was proposed, which showed that the drain current at quasi saturation is acceptable with a lattice temperature below 350 K. This is due to the limited heat sinking capability of the thermal contact node.
Proceedings ArticleDOI
An Analytical Heterojunction Bipolar Transistor Model Including Thermal and High-Current Effects
TL;DR: In this article, a physics-based analytical HBT model including high-current and thermal effects is presented, which can predict three figures commonly used in analyzing the performance of an HBT the d.c. current gain, cutoff frequency, and maximum frequency.
Proceedings ArticleDOI
Terahertz Oscillator using Rectangular-Cavity Resonator and Large-Area RTD with Heat Dissipation Structure
TL;DR: A terahertz oscillator using rectangular-cavity resonator and large-area resonant tunneling diode (RTD) with heat dissipation structure was fabricated and demonstrated in this paper .
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
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