Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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High voltage devices for standard mos technologies - characterisation and modelling
TL;DR: In this paper, the intrinsic drain voltage concept (V K ) is proposed and the variation of V K is explained and related to the physical effects inside the device and the charge variation.
Journal ArticleDOI
Thermal effects in p-channel MOSFETs at low temperatures
TL;DR: In this paper, thermal effects due to device self-heating in p-channel enhancement MOSFETs operated at cryogenic temperatures are discussed, where device heating is observed through drain-current transients and the drain current is used to monitor heating.
Journal ArticleDOI
On the Planckian bound for heat diffusion in insulators.
TL;DR: In this article, it was shown that the Planckian bound is due to a quantum mechanical bound on the sound velocity of the phonon dynamics at high temperatures, and that the velocity bound therefore implies the Planckerian bound.
Journal ArticleDOI
Temperature transients in IMPATT diodes
TL;DR: In this paper, a model for computing the thermal transient response of a diamond-heat-sinked IMPATT diode has been formulated as a means for accurately predicting the degree of heating or cooling of the junction when the diode is pulsed into or out of avalanche.
Book ChapterDOI
The Physical Parameters
TL;DR: This chapter discusses the most important models for the physical parameters of the basic semiconductor equations, as well as process modeling, which delivers information about the geometry of a device and the distribution of dopants.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
Related Papers (5)
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more