Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
Journal ArticleDOI
Thinking Like a Chemist: Intuition in Thermoelectric Materials.
Wolfgang G. Zeier,Alex Zevalkink,Zachary M. Gibbs,Geoffroy Hautier,Mercouri G. Kanatzidis,G. Jeffrey Snyder +5 more
TL;DR: An overview of how symmetry and bonding strength affect electron and phonon transport in solids, and how altering these properties may be used in strategies to improve thermoelectric performance is provided.
Journal ArticleDOI
Resonant bonding leads to low lattice thermal conductivity.
TL;DR: First-principles calculations reveal that long-ranged interaction along the 100-degree direction of the rocksalt structure exist in lead chalcogenides, SnTe, Bi2Te3, Bi and Sb due to the resonant bonding that is common to all of them, which explains why rocksalt IV-VI compounds have much lower thermal conductivities than zincblende III-V compounds.
Journal ArticleDOI
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
TL;DR: A treatment of the self-heating problem is presented, showing that, in the steady state, some of the heuristic models of heat generation, thermal conductivity, and heat capacity could indeed approximate the correct results within an error bound of 1-10%.
Journal ArticleDOI
Thermal properties of AlAs/GaAs superlattices
TL;DR: In this article, the thermal properties of AlAs/GaAs superlattices were measured with the ac calorimetric method and it was found that the thermal diffusivity and thermal conductivity of the AlAs and GaAs super-lattice are larger than those of AlGaAs alloy due to the suppression of alloy scattering in the super lattice.
References
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Journal ArticleDOI
Thermal, electrical and optical properties of (In,Ga)as alloys
TL;DR: In this paper, it was shown that the lattice thermal conductivity decreases markedly with alloying and exhibits a minimum value of about 0.05 Wdeg−1cm−1 at an alloying composition of about 50 per cent.
Journal ArticleDOI
InAs and InSb as Thermoelectric Materials
TL;DR: In this article, measurements of the electrical conductivity, thermal conductivity and Seebeck coefficient (thermoelectric power) of InSb and InAs have been made at high temperatures.
Journal ArticleDOI
Apparatus for the Measurement of the Thermal Diffusivity of Solids at High Temperatures
B. Abeles,G. D. Cody,D. S. Beers +2 more
TL;DR: In this article, an apparatus was described for measuring the thermal diffusivity of solids in the temperature range 30°-1000°C, where the dispersion and attenuation of a thermal wave propagated through the solid are measured.
Journal ArticleDOI
Thermal conductivity of silicon at low temperatures
J.C. Thompson,B.A. Younglove +1 more
TL;DR: In this article, the thermal conductivity of several single crystal silicon samples has been measured over the range 2-200°K and the concentration of impurities (which were p-type in all but one sample) was varied from 1012 cm −1 to 1016 cm−1.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more