Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Simulation of thermal effects in integrated circuits with SPICE - a behavioural model approach
TL;DR: In this article, an approach to the simulation of thermal effects in integrated circuits with SPICE by using an analog behavioural modelling concept is presented. Butler et al. present macro models for BJTs, diodes and resistors, which consider the influence of self-heating, interaction thermals, as well as the nonlinear thermal conductivity of silicon on the circuit's behaviour.
Journal ArticleDOI
Investigation on partitioned distribution of cutting heat and cutting temperature in micro cutting
Worapong Sawangsri,Kai Cheng +1 more
TL;DR: In this paper, the authors presented the scientific understanding of cutting temperature and heat partitioned distribution in micro cutting based on experimental investigation on cutting of titanium (Ti-6Al-4V), aluminum (AA6082-T6) and single crystal silicon.
Book ChapterDOI
Physics of Silicon at Cryogenic Temperatures
TL;DR: In this paper, the electronic, thermal, and optical properties of silicon (Si) at low temperatures were discussed, such as carrier mobility, carrier density, and electrical conductivity.
Journal ArticleDOI
Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates
Chadwick L. Canedy,William W. Bewley,Stephanie Tomasulo,Chul Soo Kim,Charles D. Merritt,Igor Vurgaftman,Jerry R. Meyer,Mijin Kim,Thomas J. Rotter,Ganesh Balakrishnan,Terry D. Golding +10 more
TL;DR: Interband cascade light emitting devices (ICLEDs) grown on 4 degree offcut silicon with 12% lattice mismatch are reported, with variations from wafer to wafer but uniform performance of devices from a given wafer.
Nano-scale Thermal Property Prediction by Molecular Dynamics Simulation with Experimental Validation
TL;DR: Nano-scale thermal property prediction by molecular dynamics simulation with experimental validation is described in this paper. But this work is limited to the prediction of thermal properties in the microwave domain.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
Related Papers (5)
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more