Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Book ChapterDOI
Classical Device Modeling
TL;DR: In this article, an overview of classical device modeling is given, including the derivation of the Drift-Diffusion Transport model guided by physical reasoning, and how to incorporate Fourier's law to add a dependence on temperature gradients into the description, is presented.
Journal ArticleDOI
Highly efficient photoinduced desorption of N2O and CO from porous silicon.
TL;DR: Enhanced lifetime of transient negative adsorbate due to stabilization by localized holes on PSi nanotips can explain the observed abnormally large PID efficiency on top of porous silicon.
Journal ArticleDOI
Research on the Response Time of Indirect-Heating Microwave Power Sensor
Jiabin Yan,Xiaoping Liao +1 more
TL;DR: In this article, the authors presented the response time with different parameters to study the dynamic response characteristic of indirect-heating thermoelectric microwave power sensor in order to provide reference for numerous practical applications.
DissertationDOI
Elementare optische Anregungen in Molekülen, Hybridsystemen und Halbleitern
TL;DR: In this article, a photochromic switching behavior of Diarylethenes (DTE) was investigated with a carboxylic anchor group and two gallium nitride (GaN) diode lasers.
Journal ArticleDOI
Thermal and Electrical Conductivity of Liquid Al–Si Alloys
TL;DR: In this article, the authors evaluated the thermal conductivity of liquid Al-Si alloys both from electrical resistivity and from thermal diffusivity using the van der Pauw method.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
Related Papers (5)
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more