Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments
Ahmad R. Kirmani,Brandon K. Durant,Jonathan Grandidier,Nancy M. Haegel,Michael D. Kelzenberg,Yao M. Lao,Michael D. McGehee,Lyndsey McMillon-Brown,David P. Ostrowski,Timothy J. Peshek,Bibhudutta Rout,Ian R. Sellers,Mark Steger,Don Walker,David M. Wilt,Kaitlyn VanSant,Joseph M. Luther +16 more
TL;DR: In this article , the radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and IEL) for perovskites, and prioritize proton radiation for effective nuclear interactions.
Journal ArticleDOI
Growth and characterization of TbAs:GaAs nanocomposites
Laura E. Cassels,Trevor E. Buehl,Peter Burke,Chris Palmstrom,Arthur C. Gossard,Gilles Pernot,Ali Shakouri,Chelsea R. Haughn,Matthew F. Doty,Joshua M. O. Zide +9 more
TL;DR: In this article, the properties of terbium codeposited with gallium arsenide by molecular beam epitaxy are discussed, and the success of these TbAs:GaAs materials will lead the way for the development of new rare earth nanoparticles.
Journal ArticleDOI
The hysteresis and transient behavior of Si metal-oxide-semiconductor transistors at 4.2 K. I. The kink-related counterclockwise hysteresis regime
Eddy Simoen,Cor Claeys +1 more
TL;DR: In this paper, the experimental hysteresis behavior of Si metaloxide-semiconductor transistors (MOSTs) operated at liquidhelium temperatures (LHT) is described in detail.
Journal ArticleDOI
Analysis of Frequency Stability and Thermoelastic Effects for Slotted Tuning Fork MEMS Resonators.
TL;DR: It is shown that a careful design can help reduce the thermal drift even when slots are inserted in the MEMS resonators in order to decrease thermoelastic losses.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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