Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Phonon properties and thermal conductivity from first principles, lattice dynamics, and the Boltzmann transport equation
TL;DR: In this paper, a computational framework for predicting phonon frequencies, group velocities, scattering rates, and the resulting lattice thermal conductivity is described, using input from first principles calculations and taking advantage of advances in computational power.
Journal ArticleDOI
CMOS sensors for on-line thermal monitoring of VLSI circuits
TL;DR: A new family of temperature sensors will be presented, developed by the authors especially for the purpose of thermal monitoring of VLSI chips, characterized by the very low silicon area and the low power consumption.
Journal ArticleDOI
The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors
TL;DR: In this article, the authors proposed the use of base-ballasting resistance to guarantee absolute thermal stability in AlGaAs/GaAs heterojunction bipolar transistors (HBTs).
Journal ArticleDOI
Lattice thermal conductivity of group-IV and III–V semiconductor alloys
TL;DR: In this paper, the room-temperature thermal conductivity of semiconductor alloys is analyzed using a simplified model of the alloy-disorder scattering, and a complete set of alloy disorder parameters are estimated.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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