Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
More filters
Journal ArticleDOI
An analytical quasi-saturation model considering heat flow for a DMOS device
TL;DR: In this article, an analytical quasi-saturation model considering heat flow for a DMOS device was proposed. But the analytical model only considers heat flow and does not consider the thermal contact node.
Journal ArticleDOI
Comments on ``selfheating effects in silicon resistors operated at cryogenic ambient temperatures''
Journal ArticleDOI
The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films
Journal ArticleDOI
Transient heat flow from an epitaxial layer into the substrate
TL;DR: In this paper, the transient flow of heat from a thin epitaxial layer into a substrate of the same material has been calculated and the results have been normalized so as to apply to different materials, temperatures, and layer thicknesses.
Book ChapterDOI
Simulation and design of a protection system for SMES
F. Rosenbauer,M. Harke +1 more
TL;DR: The protection system of a superconducting magnetic energy storage (SMES) prototype consists of a quench detection system, bypass switches, quench heaters and a discharge circuit as mentioned in this paper.
References
More filters
Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
Related Papers (5)
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more