Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Onset of size effect in lattice thermal conductivity of thin films
TL;DR: In this article, the onset of size effect in phonon-mediated thermal conductivity along a thin film at temperatures comparable to or greater than the Debye temperature is analyzed theoretically, assuming a quadratic frequency dependence of phonon relaxation rates in the low-frequency limit.
Journal ArticleDOI
Thermal insulating layer on a conducting substrate. Analysis of thermoreflectance experiments
TL;DR: In this article, the authors present a mathematical and experimental analysis of the thermal properties of an insulating layer on a conducting substrate, and show theoretically that conductivity and diffusivity can be determined independently thanks to a comparison with the substrate.
Journal ArticleDOI
Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates
TL;DR: The first demonstration of arsenic-rich InAs1-xPx (0 ≤ x ≤ 0.33) nanowire arrays grown on InP (111)B substrates by catalyst-free selective-area metal-organic chemical vapor deposition is presented.
Journal ArticleDOI
Raman thermometry analysis: Modelling assumptions revisited
TL;DR: In this paper, the authors investigated the applicability of the temperature-induced Raman shift method for thermal conductivity determination in bulk and mesa-like samples and compared the results of the finite element method with the usual analytical approximation for bulk samples.
Non-linearity Issues in the Dynamic Compact Model Generation
Marta Rencz,Vladimir SzCkely +1 more
TL;DR: In this article, the authors show how to generate nonlinear compact thermal models of packages generated from the transient measurements or simulations and how to check the error caused by neglecting the temperature dependence of the R,, and C,, elements of the dynamic compact thermal model.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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