Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
A semi-numerical model for multi-emitter finger AlGaAs/GaAs HBTs
TL;DR: In this article, a semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented, which consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations.
Journal ArticleDOI
Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments
Ali Al Hassan,Jonas Lähnemann,Arman Davtyan,Mahmoud Al-Humaidi,Jesús Herranz,Danial Bahrami,Taseer Anjum,Florian Bertram,Arka Bikash Dey,Lutz Geelhaar,Ullrich Pietsch +10 more
TL;DR: To unveil the origin of radiation damage, a comparison was made of nanoprobe X-ray diffraction experiments carried out on individual semiconductor nanowires in their as-grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the third-generation source PETRA III.
Book ChapterDOI
Thermal Analysis of Integrated Circuits
H. Rudolph,D. Seitzer +1 more
TL;DR: In this paper, the thermal analysis of bipolar integrated circuits within the design phase is described, and the influence of self-heating and interaction thermals was simulated with special SPICE subcircuits.
Book ChapterDOI
Maskless Dry Etching of GaAs by Focused Laser Beam
Mikio Takai,Hiroyuki Nakai,J. Tsuchimoto,Jun Tokuda,Tadanori Minamisono,K. Gamo,Susumu Namba +6 more
TL;DR: There has been increasing interest in the application of laser beams to semiconductor processing such as etching and deposition, because of the potential for low temperature and maskless processes as discussed by the authors.
Journal ArticleDOI
Investigation of magnetic anisotropy and heat dissipation in thin films of compensated antiferromagnet CuMnAs by pump–probe experiment
TL;DR: In this paper, the authors used a magneto-optical pump and probe experiment to determine the easy axis position in a 10-nm-thick antiferromagnet CuMnAs.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
Related Papers (5)
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more