Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Simulation based study of thermal effects on periodic nanostructures fabricated by laser interference
V. Velmurugan,J.P. Raina +1 more
TL;DR: In this article, the authors deal with two dimensional heat conduction analysis and the simulation of the same on silicon and germanium surfaces and report about the dependency of the thermal diffusion length on the homogeneity of the formed structures.
Journal ArticleDOI
Modeling Peak Temperature in SOI-FinFET-Like Structures Considering 2-D Heat Flow
TL;DR: In this article, an analytical thermal model to predict the peak temperature in silicon-on-insulator (SOI)-FinFET-like structures is proposed, where the device is divided into two regions based on two separate heat flow paths and each region is analyzed and modeled independently to estimate the corresponding peak temperature.
Journal ArticleDOI
Thermal conductivity of pink CVD diamond: Influence of nitrogen-related centers
A. V. Inyushkin,Alexander N. Taldenkov,V. G. Ralchenko,Guoyang Shu,Bing Dai,Andrey Bolshakov,A. V. Khomich,E. E. Ashkinazi,Kirill N. Boldyrev,A.V. Khomich,Jiecai Han,Vitali I. Konov,Jiaqi Zhu +12 more
TL;DR: In this article , a single-crystal CVD diamond lightly doped with nitrogen has been measured at temperatures from 5.7 to 410 K. This sample was carefully characterized by optical absorption and photoluminescence spectroscopy for the presence of impurities.
Book ChapterDOI
Pulsed Laser Annealing of GaAs: A Comparison Between Calculation and Experiment
A. Rose,E. K. Rose +1 more
TL;DR: In this paper, a thermal melting model for pulsed laser annealing of GaAs is presented and compared with laser dissociation measurements made as a function of absorbed laser energy.
Journal ArticleDOI
Raman Scattering and Luminescence Study of Rapid Annealing and Laser Irradiation Effects in Ion Implanted InP
D. Kirillov,James L. Merz +1 more
TL;DR: Raman scattering and luminescence spectroscopic techniques were applied to the study of ion implantation of InP and its annealing by a lamp, oven, or laser beam as mentioned in this paper.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more